Thin layer resist imaging for EUVL

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984122

M. Ryoo, S. Shirayone, E. Yano, S. Okazaki

引用次数: 1

Abstract

In this article, we show the imaging results and the lithographic properties of commercially available DUV-based single-layer and bilayer resists exposed to EUV radiation. The selected resists were UV-3 and UV-113 (Shipley) for single-layer experiments and EUV008S (TOK) for bilayers. All exposures were conducted with the ASET 20X EUV micro-stepper.

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EUVL的薄层抗蚀成像

在本文中，我们展示了市售的基于duv的单层和双层抗蚀剂暴露在EUV辐射下的成像结果和光刻性能。选择的抗蚀剂为UV-3和UV-113 (Shipley)用于单层实验，EUV008S (TOK)用于双层实验。所有暴露均使用ASET 20X EUV微步进仪进行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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