先进193nm和157nm光刻工艺中脂环抗蚀剂平台的比较

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984194

T. Ushirogouchi, N. Shida, T. Naito, S. Saito

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引用次数: 0

摘要

在采用ArF (193 nm)或F/sub 2/ (157 nm)准分子激光曝光系统的70-110 nm节点先进光学纳米光刻中，脂环抗蚀剂平台已经被认为是必不可少的。本文对这些脂环平台的理化性质进行了比较研究。我们还试图澄清它们在先进光学纳米光刻中潜力的本质区别。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparision between alicyclic resist platforms in advanced 193-nm and 157-nm lithography

Alicyclic resist platforms have already thought to be imperative in 70-110 nm nodes advanced optical nano-lithography using ArF (193-nm) or F/sub 2/ (157-nm) excimer laser exposure system. In this paper, comparative studies of physical and chemical properties of these alicyclic platforms were reported. We also attempted to clarify the essential difference of their potentials in advanced optical nano-lithography.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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