{"title":"衰减相移掩模埋入材料的化学稳定性探讨及193nm光刻中0.1 /spl μ m以下接触孔模式高透射率AttPSM的应用","authors":"Cheng‐Ming Lin","doi":"10.1109/IMNC.2001.984128","DOIUrl":null,"url":null,"abstract":"In order to provide good resolution enhancing efficiency and productivity, embedded materials for phase shifting masks must meet many criteria, including phase shift of 180°, exposure durability (Smith et al, 1996), etc. However, the most important property of embedded materials is chemical stability, including cleaning, exposure and environmental durability. We develop the correlation between chemical compositions and sputtering conditions of thin films for approaches to embedded materials with better chemical stability. This paper reports the utilization of AlSi/sub x/O/sub y/ as a new bi-layer high transmittance (T⩾15%) embedded material for attenuated phase-shifting mask (AttPSM) in 193 nm.","PeriodicalId":202620,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Approaching to chemical stability of embedded material for attenuated phase-shifting mask and application of high transmittance AttPSM for sub-0.1 /spl mu/m contact hole pattern in 193 nm lithography\",\"authors\":\"Cheng‐Ming Lin\",\"doi\":\"10.1109/IMNC.2001.984128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to provide good resolution enhancing efficiency and productivity, embedded materials for phase shifting masks must meet many criteria, including phase shift of 180°, exposure durability (Smith et al, 1996), etc. However, the most important property of embedded materials is chemical stability, including cleaning, exposure and environmental durability. We develop the correlation between chemical compositions and sputtering conditions of thin films for approaches to embedded materials with better chemical stability. This paper reports the utilization of AlSi/sub x/O/sub y/ as a new bi-layer high transmittance (T⩾15%) embedded material for attenuated phase-shifting mask (AttPSM) in 193 nm.\",\"PeriodicalId\":202620,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.2001.984128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2001.984128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
为了提供良好的分辨率，提高效率和生产力，相移掩模的嵌入材料必须满足许多标准，包括180°的相移，暴露耐久性(Smith et al .， 1996)等。然而，嵌入材料最重要的特性是化学稳定性，包括清洁、暴露和环境耐久性。我们提出了薄膜化学成分与溅射条件之间的关系，为获得具有更好化学稳定性的嵌入材料提供了途径。本文报告了AlSi/sub x/O/sub y/作为一种新的双层高透射率(T小于或等于15%)嵌入材料在193nm中用于衰减相移掩模(AttPSM)的利用。
Approaching to chemical stability of embedded material for attenuated phase-shifting mask and application of high transmittance AttPSM for sub-0.1 /spl mu/m contact hole pattern in 193 nm lithography
In order to provide good resolution enhancing efficiency and productivity, embedded materials for phase shifting masks must meet many criteria, including phase shift of 180°, exposure durability (Smith et al, 1996), etc. However, the most important property of embedded materials is chemical stability, including cleaning, exposure and environmental durability. We develop the correlation between chemical compositions and sputtering conditions of thin films for approaches to embedded materials with better chemical stability. This paper reports the utilization of AlSi/sub x/O/sub y/ as a new bi-layer high transmittance (T⩾15%) embedded material for attenuated phase-shifting mask (AttPSM) in 193 nm.
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