近距离x射线光刻复制图案的抗蚀剂LER分析

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 2001-10-31 DOI:10.1109/IMNC.2001.984192

Y. Kikuchi, T. Taguchi, H. Matsunaga

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引用次数: 0

摘要

LSI晶片的临界尺寸(CD)正在向100nm和更窄的方向发展，而光刻技术对CD控制的要求也在10nm以下。在这样的尺寸下，抗蚀剂图案的线边缘粗糙度(LER)是不容忽视的。本文通过对比实验抗蚀剂的粗糙度和溶解度与计算图像，讨论了图案图像对LER的依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of resist LER for the patterns replicated by proximity X-ray lithography

The critical dimensions (CD) of LSI patterns are becoming 100 nm and narrower, and the requirement for CD control in lithography is becoming less than 10 nm. At such dimensions line edge roughness (LER) of resist patterns cannot be overlooked. This paper discusses the dependence of pattern image on LER, by comparison of observed roughness and measured dissolution rates of experimental resists with calculated images.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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