Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95最新文献

A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation 用于电路仿真的具有自加热的SOI横向DMOS器件的闭式物理后门偏置准饱和模型

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-31 DOI: 10.1109/ISPSD.1995.515057

C.M. Liu, F. Shone, J. Kuo

引用次数: 3

Simulations and measurements of emitter properties in 5 kV Si PIN diodes 5kv Si PIN二极管发射极特性的模拟与测量

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515067

O. Tornblad, M. Domeij, B. Breitholtz, J. Linnros, M. Ostling

引用次数: 8

High-efficiency performance of microwave power 4H-SiC amplifiers 微波功率4H-SiC放大器的高效率性能

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515088

M. Shin, T.J. Kordas, R. Trew

引用次数: 3

A 8 kV 3500 A light triggered thyristor 一个8kv 3500a光触发晶闸管

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515031

T. Nimura, Y. Tsunoda, Y. Tadokoro, N. Yamano

引用次数: 6

A novel rectifier based on bipolar-mode SIT structure 一种基于双极模SIT结构的新型整流器

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515048

K. Yano, M. Kasuga, A. Shimizu, M. Mitsui, H. Moroshima, J. Morita

引用次数: 1

Application specific IPM for low power-end motor drives 应用特定的IPM低功率端电机驱动器

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515036

G. Majumdar, S. Hatae, M. Fukunaga, T. Oota

{"title":"Application specific IPM for low power-end motor drives","authors":"G. Majumdar, S. Hatae, M. Fukunaga, T. Oota","doi":"10.1109/ISPSD.1995.515036","DOIUrl":"https://doi.org/10.1109/ISPSD.1995.515036","url":null,"abstract":"Along with the rise of need for global energy conservation, the inverterization in the power electronics field is progressing quickly. In the area of low power motor control also, inverterization has become an indispensable choice, since it corresponds to ensuing regulations related to the Earth's energy preservation. However, in this low power area the cost of inverterization has to be justifiable and, so, optimization of total-cost-performance ratio has become very important. This time, paying attention to low capacity motor drive, a new series of intelligent power modules (IPM) called the ASIPM (Application Specific IPM) covering 0.1 kW through 1.5 kW drive capability has been developed. These devices contribute further miniaturization and higher performance features to its application systems. As these devices have been developed through various process of optimization related to IGBT chip, free-wheel diode chip, main controller HVIC circuitry and process technologies, packaging structure, etc., these promise high-level cost-to-performance feature to the next generation application systems. This paper explains the aspects of internal system design and key-technologies involved together with numerous functions and features of the new ASIPM series.","PeriodicalId":200109,"journal":{"name":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","volume":"286 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124553790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Subcircuit SPICE modeling of a lateral IGBT for high voltage power IC design 用于高压功率集成电路设计的横向IGBT子电路SPICE建模

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515062

Y. Kawaguchi, Y. Terazaki, A. Nakagawa

引用次数: 5

The ES-MGBT: a new fast switching MOS-gated power bipolar transistor with conductivity-modulation by a positive feedback mechanism ES-MGBT是一种新型快速开关mos门控功率双极晶体管，其电导率由正反馈机制调制

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515027

J. Ajit, D. Kinzer

引用次数: 2

4500 V IEGTs having switching characteristics superior to GTO 具有优于GTO的开关特性的4500v晶体管

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515086

M. Kitagawa, A. Nakagawa, K. Matsushita, S. Hasegawa, T. Inoue, A. Yahata, H. Takenaka

{"title":"4500 V IEGTs having switching characteristics superior to GTO","authors":"M. Kitagawa, A. Nakagawa, K. Matsushita, S. Hasegawa, T. Inoue, A. Yahata, H. Takenaka","doi":"10.1109/ISPSD.1995.515086","DOIUrl":"https://doi.org/10.1109/ISPSD.1995.515086","url":null,"abstract":"In this paper, the authors report, for the first time, an exact prediction of the turn-off characteristics of 4500 V IEGTs and compare the results with those for GTOs. The prediction was made by means of device simulation and trial fabrication of IEGTs. The turn-off power loss of the 4500 V IEGT with a 17 /spl mu/m deep trench gate is predicted to be less than that of the 4500 V GTO-thyristor. It was found that the IEGTs with 4 /spl mu/m deep and wide trench gate can attain a small on-state voltage drop, which is the same level as that of the IEGT with 17 /spl mu/m deep and narrow trench gate. The on-state voltage drop of the fabricated IEGT with the 4 /spl mu/m deep trench gate is 4.5 V at 50 A/cm/sup 2/. Although the device design of the fabricated IEGT was not optimized, the observed turn-off characteristics were in good agreement with the simulated results. It has been numerically confirmed that the 4500 V IEGT can realize a smaller turn-off loss than a 4500 V GTO-thyristor under a typical application circuit. It was, thus, confirmed that IEGTs can replace GTOs without degradation of switching frequency.","PeriodicalId":200109,"journal":{"name":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133168281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

A dielectric isolated high-voltage IC-technology for off-line applications 一种用于离线应用的介电隔离高压集成电路技术

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI: 10.1109/ISPSD.1995.515058

M. Stoisiek, K. Oppermann, U. Schwalke, D. Takács

引用次数: 24