Subcircuit SPICE modeling of a lateral IGBT for high voltage power IC design

Abstract

In this paper, a subcircuit model of lateral IGBTs on SOI substrate for SPICE simulation is presented. The model accurately takes into account the characteristics of lateral IGBTs based on the results of 2-D device simulators. Static and transient analysis of a lateral IGBT was carried out, using this model. The simulation results agreed very well with experimental results. An application of the proposed model to a over current protection circuit design is presented.