High-efficiency performance of microwave power 4H-SiC amplifiers

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515088

M. Shin, T.J. Kordas, R. Trew

引用次数: 3

Abstract

The high frequency performance of a 4H-SiC MESFET is examined using an advanced harmonic-balance device/circuit simulator combined with the two-dimensional device simulator PISCES-IIB. Very good agreement with experimental measurements is achieved. Circuit and device optimizations are discussed. An improved device structure with a maximum power added efficiency approaching the theoretical limit is predicted.

查看原文本刊更多论文

微波功率4H-SiC放大器的高效率性能

采用先进的谐波平衡器件/电路模拟器结合二维器件模拟器PISCES-IIB，对4H-SiC MESFET的高频性能进行了测试。与实验测量结果吻合良好。讨论了电路和器件的优化。预测了一种改进的器件结构，其最大功率增加效率接近理论极限。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

自引率

0.00%

发文量