A novel rectifier based on bipolar-mode SIT structure

Abstract

The authors propose a novel rectifier based on bipolar-mode static induction transistor (BSIT) operation. A numerical simulation has revealed that, this rectifier, which operates with a combination of static induction effects and minority carrier injection during forward conduction, exhibits a forward-voltage drop and a reverse recovery time that are smaller than those of the conventional p-i-n rectifiers, and without causing excessive leakage current. It is also shown that, at temperatures below 400 K, the steady state power dissipation for the rectifier using BSIT operation is superior to that for the p-i-n rectifiers and the Schottky rectifiers.