A 8 kV 3500 A light triggered thyristor

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515031

T. Nimura, Y. Tsunoda, Y. Tadokoro, N. Yamano

引用次数: 6

Abstract

8 kV-3500 A light-triggered thyristor (LTT) has been developed using a 6 in wafer. The LTT has an improved gate structure to achieve high light triggering sensitivity, high di/dt capability and high dv/dt tolerance. Especially, trade-off between on-state voltage and reverse recovery charge has been improved by proton irradiation.

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一个8kv 3500a光触发晶闸管

8kv - 3500a光触发晶闸管(LTT)采用6英寸晶圆制成。该LTT具有改进的栅极结构，可实现高光触发灵敏度、高di/dt能力和高dv/dt容限。特别是质子辐照改善了导通电压与反向恢复电荷之间的权衡关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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