5kv Si PIN二极管发射极特性的模拟与测量

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515067

O. Tornblad, M. Domeij, B. Breitholtz, J. Linnros, M. Ostling

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引用次数: 8

摘要

通过比较5kv Si PIN二极管中多余载流子浓度和表面电位的模拟和实测数据，研究了发射极的特性。比较了电流密度在30 ~ 300 A/cm/sup 2/范围内、n/sup +/和p/sup +/发射体不同深度和浓度下的正向导通和导通情况。利用自由载流子吸收(FCA)技术在抛光二极管表面扫描钨探针尖端，测量了多余载流子密度与深度和表面电位的关系。FCA的测量结果与模拟数据有很好的相关性，但表面电位的模拟数据与实测数据之间的差异表明需要改进物理模型。

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Simulations and measurements of emitter properties in 5 kV Si PIN diodes

Emitter properties have been studied by comparing simulated and measured data of excess carrier concentration and surface potential in 5 kV Si PIN diodes. Comparison were made under forward conduction and turn-on for current densities in the range 30-300 A/cm/sup 2/ and for different depths and concentrations of the n/sup +/ and p/sup +/ emitters. The density of excess carriers were measured by the Free Carrier Absorption (FCA) technique as a function of depth and the surface potential by scanning a tungsten probe tip on the polished diode surfaces. The FCA measurements correlate well to simulated data, but discrepancies between simulated and measured data of the surface potential indicate the need for improved physical models.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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