用于高压功率集成电路设计的横向IGBT子电路SPICE建模

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515062

Y. Kawaguchi, Y. Terazaki, A. Nakagawa

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引用次数: 5

摘要

本文提出了一种用于SPICE仿真的SOI衬底上横向igbt的子电路模型。基于二维器件模拟器的结果，该模型准确地考虑了横向igbt的特性。利用该模型对横向IGBT进行了静力和瞬态分析。仿真结果与实验结果吻合较好。给出了该模型在过流保护电路设计中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Subcircuit SPICE modeling of a lateral IGBT for high voltage power IC design

In this paper, a subcircuit model of lateral IGBTs on SOI substrate for SPICE simulation is presented. The model accurately takes into account the characteristics of lateral IGBTs based on the results of 2-D device simulators. Static and transient analysis of a lateral IGBT was carried out, using this model. The simulation results agreed very well with experimental results. An application of the proposed model to a over current protection circuit design is presented.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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