2003 8th International Symposium Plasma- and Process-Induced Damage.最新文献_第4页

Direct measurement of gate oxide damage from plasma nitridation process 等离子体氮化过程栅氧化损伤的直接测量

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1200939

Y. Jin, C. Chen, V. Chang, D. Leel, T. Lee, S. Chen, M. Liang

引用次数: 0

Low charging damage SiO/sub 2/ etching with a low-angle forward reflected neutral beam 低充电损伤SiO/sub /蚀刻与低角度前反射中性光束

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1200953

D.H. Lee, M. Chung, S. Jung, G. Yeom

引用次数: 0

Plasma induced substrate damage in high dose implant resist strip process 大剂量植入抗蚀剂条带过程中等离子体诱导的底物损伤

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1200919

B. Chan, B. Perng, L. Sheu, Y. Chiu, H. Tao

引用次数: 4

A fast plasma induced damage monitoring method 一种快速等离子体损伤监测方法

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1200933

M. Yang, T. Ambrose

引用次数: 0

Effects of plasma-induced damage to ultrathin (/spl les/1.5 nm) gate dielectric on equivalent oxide thickness downscaling using plasma nitridation process 等离子体损伤超薄(/spl les/1.5 nm)栅极电介质对等离子体氮化工艺降低等效氧化物厚度的影响

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1200940

V. Chang, C. Chen, C.-L. Wu, D. Lee, T. Lee, S. Chen, M. Liang

{"title":"Effects of plasma-induced damage to ultrathin (/spl les/1.5 nm) gate dielectric on equivalent oxide thickness downscaling using plasma nitridation process","authors":"V. Chang, C. Chen, C.-L. Wu, D. Lee, T. Lee, S. Chen, M. Liang","doi":"10.1109/PPID.2003.1200940","DOIUrl":"https://doi.org/10.1109/PPID.2003.1200940","url":null,"abstract":"Plasma nitridation was used to increase the dielectric constant of SiO/sub 2/ so that the equivalent oxide thickness (EOT) could be reduced. The effects of plasma-induced damage to ultrathin (/spl les/15 A) plasma-nitrided oxide (PNO) on EOT scaling were systematically investigated. The study showed that increasing nitrogen concentrations of PNO using aggressive plasma nitridation failed to reduce the EOT because the plasma-induced parasitic oxidation resulted in a substantial increase in oxide thickness that overrode the dielectric constant increase and consequently increased the EOT. The carrier mobility degradations and higher HF etching rates of PNO demonstrated the damage from plasma nitridation. Although reducing base oxide thickness was able to scale down EOT, the efficiency was extremely poor; a decrease of 1.5 A in base oxide thickness only resulted in 0.3 A of EOT reduction. MOSFET device data and SIMS depth profiles indicated that a thinner base oxide was more susceptible to plasma-induced damage. Finally, this study showed that after optimization, the plasma nitridation process was able to reduce plasma-induced damage so that the EOT could be scaled down without penalties.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132905659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Critical issues in plasma etching processes involved in the gate etch fabrication of CMOS devices 等离子体蚀刻工艺在CMOS器件栅极蚀刻制造中的关键问题

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1199719

O. Joubert, E. Pargon, X. Detter, J. Chevolleau, G. Cunge, L. Vallier

引用次数: 1

Metal contamination monitoring in ion implantation technology 离子注入技术中的金属污染监测

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1200923

E. Colelli, A. Galbiati, D. Caputo, M. Polignano, V. Soncini, G. Salva

引用次数: 2

Automated antenna detection and correction methodology in VLSI designs VLSI设计中的自动天线检测和校正方法

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1200947

V. Shukla, V. Gupta, C. Guruprasad, G. Kadamati

引用次数: 10

Investigation of electron-shading effects during high-current ion implants 大电流离子植入过程中电子遮蔽效应的研究

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1200952

W. Lukaszek, M.I. Current, S. Daryanani, L. Larson, T. Rhoad, J. Shields, M. Vella, D. Wagner

{"title":"Investigation of electron-shading effects during high-current ion implants","authors":"W. Lukaszek, M.I. Current, S. Daryanani, L. Larson, T. Rhoad, J. Shields, M. Vella, D. Wagner","doi":"10.1109/PPID.2003.1200952","DOIUrl":"https://doi.org/10.1109/PPID.2003.1200952","url":null,"abstract":"Charging characteristics of As/sup +/, BF/sub 2//sup +/, and B/sup +/ high-current ion implants, performed at different energies and different plasma flood system settings, were measured using bare and resist-covered CHARM/spl reg/-2 wafers patterned with a six-field mask containing holes ranging from 2 /spl mu/m to 0.5 /spl mu/m (clear and resist-covered fields were also used). The results show significant differences in the charging characteristics of high-current ion implanters compared to contemporary plasma-based process tools. The differences appear to be independent of ion energy, but depend on the set-up conditions of the plasma flood system used to limit positive charging caused by the ion beam. In contrast to plasma tools, the implants typically exhibited positive and negative potentials independent of hole size. The positive and negative current densities measured in the resist holes were also independent of hole size (and significantly higher than in the clear field). However, a 500 eV B/sup +/ implant with modern plasma flood control produced positive and negative potentials that scaled with hole size, as expected for electron shading, but with current densities below CHARM/spl reg/-2 detection levels. This establishes an existence proof that optimal plasma flood can achieve near perfect current balance between the positive charging from the ion beam and the negative charging from the flood plasma. Altogether, these results suggest that charging damage in high-current ion implanters should be controllable when implant mask and device features are scaled down.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129848886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A general concept for monitoring plasma induced charging damage 监测等离子体诱导充电损伤的一般概念

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI: 10.1109/PPID.2003.1199725

D. Smeets, A. Martin, A. Scarp

引用次数: 10