{"title":"一种快速等离子体损伤监测方法","authors":"M. Yang, T. Ambrose","doi":"10.1109/PPID.2003.1200933","DOIUrl":null,"url":null,"abstract":"We have developed a new and Fast Feedback Plasma Monitoring Technique (FPMT) to monitor and evaluate the plasma reactor and processes. The FPMT technique measures the slope of flat-band voltage (Vfb) versus oxide thickness of an oxide wafer, and gives reliable results. We discuss the new technique and report some experimental results on plasma charging damage characterization for different commercial available plasma reactors. Furthermore, we discuss the correlation results between full flow Predator data and FPMT data.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A fast plasma induced damage monitoring method\",\"authors\":\"M. Yang, T. Ambrose\",\"doi\":\"10.1109/PPID.2003.1200933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a new and Fast Feedback Plasma Monitoring Technique (FPMT) to monitor and evaluate the plasma reactor and processes. The FPMT technique measures the slope of flat-band voltage (Vfb) versus oxide thickness of an oxide wafer, and gives reliable results. We discuss the new technique and report some experimental results on plasma charging damage characterization for different commercial available plasma reactors. Furthermore, we discuss the correlation results between full flow Predator data and FPMT data.\",\"PeriodicalId\":196923,\"journal\":{\"name\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPID.2003.1200933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1200933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have developed a new and Fast Feedback Plasma Monitoring Technique (FPMT) to monitor and evaluate the plasma reactor and processes. The FPMT technique measures the slope of flat-band voltage (Vfb) versus oxide thickness of an oxide wafer, and gives reliable results. We discuss the new technique and report some experimental results on plasma charging damage characterization for different commercial available plasma reactors. Furthermore, we discuss the correlation results between full flow Predator data and FPMT data.
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