A fast plasma induced damage monitoring method

Abstract

We have developed a new and Fast Feedback Plasma Monitoring Technique (FPMT) to monitor and evaluate the plasma reactor and processes. The FPMT technique measures the slope of flat-band voltage (Vfb) versus oxide thickness of an oxide wafer, and gives reliable results. We discuss the new technique and report some experimental results on plasma charging damage characterization for different commercial available plasma reactors. Furthermore, we discuss the correlation results between full flow Predator data and FPMT data.