{"title":"低充电损伤SiO/sub /蚀刻与低角度前反射中性光束","authors":"D.H. Lee, M. Chung, S. Jung, G. Yeom","doi":"10.1109/PPID.2003.1200953","DOIUrl":null,"url":null,"abstract":"In this study, energetic reactive radical beams were formed with SF/sub 6/ using a low-angle forward reflected neutral beam technique and the etch properties of SiO/sub 2/ and possible damage induced by the radical beam were investigated. The results showed that when SiO/sub 2/ was etched with the energetic reactive radical beams generated with SF/sub 6/, SiO/sub 2/ etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no charging damage could be found.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low charging damage SiO/sub 2/ etching with a low-angle forward reflected neutral beam\",\"authors\":\"D.H. Lee, M. Chung, S. Jung, G. Yeom\",\"doi\":\"10.1109/PPID.2003.1200953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, energetic reactive radical beams were formed with SF/sub 6/ using a low-angle forward reflected neutral beam technique and the etch properties of SiO/sub 2/ and possible damage induced by the radical beam were investigated. The results showed that when SiO/sub 2/ was etched with the energetic reactive radical beams generated with SF/sub 6/, SiO/sub 2/ etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no charging damage could be found.\",\"PeriodicalId\":196923,\"journal\":{\"name\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPID.2003.1200953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1200953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low charging damage SiO/sub 2/ etching with a low-angle forward reflected neutral beam
In this study, energetic reactive radical beams were formed with SF/sub 6/ using a low-angle forward reflected neutral beam technique and the etch properties of SiO/sub 2/ and possible damage induced by the radical beam were investigated. The results showed that when SiO/sub 2/ was etched with the energetic reactive radical beams generated with SF/sub 6/, SiO/sub 2/ etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no charging damage could be found.
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