等离子体蚀刻工艺在CMOS器件栅极蚀刻制造中的关键问题

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI:10.1109/PPID.2003.1199719

O. Joubert, E. Pargon, X. Detter, J. Chevolleau, G. Cunge, L. Vallier

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引用次数: 1

摘要

等离子体工艺涉及到制造先进的CMOS器件变得越来越具有挑战性。复杂性的增加来自于新材料的引入以及特征尺寸的减小。在本文中，我们将简要地指出我们目前在器件制造的前端级别面临的一些最关键的问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Critical issues in plasma etching processes involved in the gate etch fabrication of CMOS devices

Plasma processes involved in the fabrication of advanced CMOS devices become increasingly challenging. The increase in complexity comes from the introduction of new materials as well as the decrease in feature dimension. In this paper, we will briefly point out some of the most critical issues that we are facing nowadays at the front end level of the device fabrication.

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2003 8th International Symposium Plasma- and Process-Induced Damage.

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