A general concept for monitoring plasma induced charging damage

D. Smeets, A. Martin, A. Scarp
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引用次数: 10

Abstract

For many years antenna structures have been successfully applied for detection of charging damage from a variety of sources such as plasma etching, ion implantation and plasma enhanced deposition. In this work a guideline for PID monitoring standardization for JEDEC has been given. A systematic hierarchy approach has been presented in order to be able to establish an automatic data evaluation usable for production monitoring. A minimum set of antenna test structures has been addressed, as well as the correct characterization techniques. It has been shown that a diagnostic stress is required, in order to be able to detect signals when PID issues occur. The large amount of data generated by the monitoring measurements is hardly manageable without an automatic procedure. The definition of such procedure depends on the choice of the monitoring parameters, but aims in any case to reduce the measured parameters to a clear and simple figure of the PID that can be easily trended. Finally, the obtained PID figure can be used to establish wafer scarp criteria based on PID.
监测等离子体诱导充电损伤的一般概念
多年来,天线结构已经成功地应用于各种来源的充电损伤检测,如等离子体蚀刻、离子注入和等离子体增强沉积。本文提出了JEDEC PID监控标准化的指导思想。为了能够建立一个可用于生产监控的自动数据评估系统,提出了一种系统的分层方法。已经解决了天线测试结构的最小集,以及正确的表征技术。已经证明,诊断压力是必需的,以便能够在PID问题发生时检测信号。如果没有自动程序,监测测量产生的大量数据很难管理。该程序的定义取决于监测参数的选择,但无论如何,其目的都是将测量参数简化为易于趋势化的清晰简单的PID图形。最后,利用得到的PID图建立基于PID的晶圆陡降判据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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