Low charging damage SiO/sub 2/ etching with a low-angle forward reflected neutral beam

Abstract

In this study, energetic reactive radical beams were formed with SF/sub 6/ using a low-angle forward reflected neutral beam technique and the etch properties of SiO/sub 2/ and possible damage induced by the radical beam were investigated. The results showed that when SiO/sub 2/ was etched with the energetic reactive radical beams generated with SF/sub 6/, SiO/sub 2/ etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no charging damage could be found.