Plasma induced substrate damage in high dose implant resist strip process

Abstract

In this communication we report our work on the ashing of post high dosage implant photoresist removal. Attention is focused on plasma damage to the silicon substrate, in addition to hard skin removal capabilities. An inductively coupled plasma (ICP) source is chosen for this study due to its capability of separate control of source and bias power, although our results are directly applicable to conventional plasma ashing facilities. Electrical data for both NMOS and PMOS devices are compared and correlated with the physical substrate damage, and suggestions for a residue-free process with minimum substrate damage are given.