Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits最新文献

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A 14-bit 20-Msamples/s pipelined A/D converter with high slewing amplifier 具有高回转放大器的14位20 m采样/s的流水线A/D转换器
M. Kinyua, F. Maloberti, W. Gosney
{"title":"A 14-bit 20-Msamples/s pipelined A/D converter with high slewing amplifier","authors":"M. Kinyua, F. Maloberti, W. Gosney","doi":"10.1109/DCAS.2004.1360447","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360447","url":null,"abstract":"This paper describes a 14-bit 20MSPS switched-capacitor pipelined ADC designed in a complementary SiGe/SOI bipolar process. It features an input-to-output class A/B operational amplifier designed to drive large sampling capacitors of 10 pF without consuming excessive power. Prototype implementation exhibits measured INL of +/- 2.0 LSB, DNL of +/- 0.5 LSB, SNR of 73 dB and SFDR of 85 dB with a 2 MHz input signal. Analog power dissipation at lowest amplifier bias setting is 390 mW with 5 V supply.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122993106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Clocking and synchronization in sub-90 nm system-on-chip (SoC) designs sub- 90nm片上系统(SoC)设计中的时钟和同步
R. Sridhar
{"title":"Clocking and synchronization in sub-90 nm system-on-chip (SoC) designs","authors":"R. Sridhar","doi":"10.1109/DCAS.2004.1360436","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360436","url":null,"abstract":"Sub-90 nm designs create many challenging problems for VLSI designers. A key challenge is the unpredictable behavior of the interconnect characteristics resulting in delay variations. New techniques such as current-mode interconnection scheme and results from other circuit domain could be helpful in dealing with this problem. Also, prevention and correction both should be considered in achieving signal and function integrity. This article presents some solutions for the clocking and synchronization problem for the design of SoCs specifically in asynchronous design, GALS, and current-mode interconnects.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"917 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116415146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A gate leakage reduction strategy for sub-70 nm memory circuits 一种用于70nm以下存储电路的栅极泄漏减少策略
P. Elakkumanan, Charan Thondapu, R. Sridhar
{"title":"A gate leakage reduction strategy for sub-70 nm memory circuits","authors":"P. Elakkumanan, Charan Thondapu, R. Sridhar","doi":"10.1109/DCAS.2004.1360446","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360446","url":null,"abstract":"The gate oxide thickness in sub-70 nm process technologies approaches the limit where direct gate tunneling current starts to play a significant role in both off-state and on-state transistor operating modes. This gate leakage current, in addition to sub-threshold leakage, results in dramatic increase in total leakage power. Hence, efficient leakage reduction strategies that address the different dominant leakage components are necessary. In this paper, we analyze the use of NC-SRAM memory cell for its effectiveness in gate leakage reduction. The technique provided around 60% gate leakage savings in 65 nm technology with minimal impact on area, as compared to a conventional SRAM.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134495220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Decap aware sleep transistor design Decap感知休眠晶体管设计
Ramaprasath Vilangudipitchai, P. Balsara
{"title":"Decap aware sleep transistor design","authors":"Ramaprasath Vilangudipitchai, P. Balsara","doi":"10.1109/DCAS.2004.1360453","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360453","url":null,"abstract":"Multithreshold CMOS (MTCMOS) has been a proven methodology to reduce leakage power in DSM designs. Previously lumped sleep transistors were designed for worst case condition, and hence occupied a large area. To reduce the area, cluster based sleep transistor design was proposed which takes into account simultaneous switching within the circuit blocks. In this paper, we propose an improved method of clustering the sleep transistors by taking on chip decoupling capacitances into account. With the proposed heuristic, we are able to obtain sleep transistor area reduction of 64% with respect to conventional clustering methodology. The leakage current reduction for the circuit blocks is in the order of 2000X to 8000X with respect to the ones without sleep transistors. We also analyze the effect of the sleep transistor width on the wake-up time of the circuit blocks, which can be used effectively during system design. The experimental results are shown for ISCAS'85 benchmarks.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"301 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115545918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electronic dispersion compensation for 10 Gbps data transmission over multi-mode fibers 多模光纤上10gbps数据传输的电子色散补偿
Hao Liu, Xiaofeng Lin, Youngjune Kim, Jin Liu, Sungying Jung
{"title":"Electronic dispersion compensation for 10 Gbps data transmission over multi-mode fibers","authors":"Hao Liu, Xiaofeng Lin, Youngjune Kim, Jin Liu, Sungying Jung","doi":"10.1109/DCAS.2004.1360450","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360450","url":null,"abstract":"This paper presents system simulation results of electronic dispersion compensation for 10 Gbps data transmission over multimode fibers for Ethernet optical systems. The channel impulse response is based on measurement of one of the worst case examples - the equal power split impulse response channel. Symbol rate, 2/spl times/, and 4/spl times/ fractionally spaced FIR filters are used as the equalizer. Two signaling systems, binary and PAM-4, are considered; in each case, different FIR tap space rates are studied. Study shows that binary signaling scheme requires less tap number than PAM-4 scheme and it generally requires more taps for fractionally spaced FIR filter than symbol rate FIR filter to achieve same performance.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115126775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 16b 65 MSps pipeline ADC core with 230 fs clock jitter in 3.3 V SiGe BiCMOS: from simulation to silicon 在3.3 V SiGe BiCMOS中,具有230 fs时钟抖动的16b 65 MSps流水线ADC核心:从模拟到硅
A. Zanchi, F. Tsay, I. Papantonopoulos
{"title":"A 16b 65 MSps pipeline ADC core with 230 fs clock jitter in 3.3 V SiGe BiCMOS: from simulation to silicon","authors":"A. Zanchi, F. Tsay, I. Papantonopoulos","doi":"10.1109/DCAS.2004.1360455","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360455","url":null,"abstract":"This work introduces key simulation techniques enabling the design of a 16b 65 MSps pipeline ADC in 0.4 /spl mu/m, 45 GHz-f/sub T/ SiGe BiCMOS. A complete methodology for INL investigation with SPICE leads to understand the distortion introduced by Track/Hold as well as quantizer at 3.3 V supply and high input range (4Vpp). Simulations of aperture uncertainty are presented that match the measured 230 fs jitter, yielding 74.5 dBFS SNR at 150 MHz input. The test chip delivers 78.3 dBFS SNR, 88 dBc SFDR at 65 MSps/1 MHz with 970 mW power consumption.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128004831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DSP-coupled 2.4 GHz RF transmitter in 130 nm CMOS dsp耦合2.4 GHz射频发射器在130纳米CMOS
R. Staszewski, R. Staszweski, J. Wallberg, T. Jung, C. Hung, D. Leipold, K. Maggio, P. Balsara
{"title":"DSP-coupled 2.4 GHz RF transmitter in 130 nm CMOS","authors":"R. Staszewski, R. Staszweski, J. Wallberg, T. Jung, C. Hung, D. Leipold, K. Maggio, P. Balsara","doi":"10.1109/DCAS.2004.1360451","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360451","url":null,"abstract":"We present an IC chip that integrates a TMS320C54x DSP. which is commonly used in cellular phones, with a multiGHz digital RF transmitter that meets the Bluetooth specifications. The RF transmitter is tightly coupled with the DSP and is directly mapped to its address space. The transmitter architecture is based on an all-digital PLL, which is built from the ground up using digital techniques and digital creation flow that exploit high speed and high density of a deep-submicron CMOS process while avoiding its weaker handling of voltage. The frequency synthesizer features a wideband frequency modulation capability. Due to its programmability, flexibility and portability, the digital RF transmitter serves as a foundation of a digital radio processor (DRP). As part of the digital flow, the digitally-controlled oscillator (DCO) and a class-E power-amplifier are created as ASIC cells with digital I/O's. All digital blocks, including the 2.4 GHz logic, are synthesized from VHDL and auto routed. The use of VHDL allows for a tight and seamless integration of RF with the DSP. To take advantage of the direct DSP-RF coupling and to demonstrate a software-defined radio (SDR) capability, a DSP program is written to perform modulation of the GSM standard. The chip is fabricated in a baseline 130 nm CMOS process with no analog extensions.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115208082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impact of selective process bias (SPB) of interconnects on circuit delay 互连选择性工艺偏置(SPB)对电路延迟的影响
M. Kulkarni, N. Nagaraj, A. Marshall, Viet Le
{"title":"Impact of selective process bias (SPB) of interconnects on circuit delay","authors":"M. Kulkarni, N. Nagaraj, A. Marshall, Viet Le","doi":"10.1109/DCAS.2004.1360449","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360449","url":null,"abstract":"Interconnect parasitics are playing an increasingly important role in circuit performance as we move into the nanometer era of semiconductor technology. Hence accounting for interconnect process effects such as selective process bias (SPB) is becoming important for accurate circuit performance simulations. In this paper, the impact of SPB on circuit delay is demonstrated by studying its effect on capacitance, resistance, ring oscillator speed, and delay of commonly used ASIC cells. Simulations with and without SPB and comparison to measurements of ring oscillator structures in 90 nm process technology show how accounting for SPB increases the accuracy in prediction of ring oscillator speed.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"15 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134116023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High-speed digital circuits for a 2.4 GHz all-digital RF frequency synthesizer in 130 nm CMOS 1.3 nm CMOS 2.4 GHz全数字射频频率合成器的高速数字电路
R. Staszewski, J. Wallberg, Jinseok Koh, P. Balsara
{"title":"High-speed digital circuits for a 2.4 GHz all-digital RF frequency synthesizer in 130 nm CMOS","authors":"R. Staszewski, J. Wallberg, Jinseok Koh, P. Balsara","doi":"10.1109/DCAS.2004.1360452","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360452","url":null,"abstract":"We present high-speed digital circuits that comprise the first ever reported all-digital 2.4 GHz frequency synthesizer and transmitter that meet the Bluetooth specifications. The chip is built in a digital 130 nm CMOS process with no analog extensions and features high logic gate density of 150 kgates per mm/sup 2/. The transmitter architecture is based on an all-digital phase-locked loop (AD-PLL), which is built from the ground up using digital techniques that exploit high speed and high density of a deep-submicron CMOS process while avoiding its weaker handling of voltage resolution. We also present a high-performance flip-flop used in this design. It features low CLK-to-Q delay and negative setup time. Because the flip-flop is symmetrical along the vertical axis, the resolution window is symmetrical for rising and falling data transitions in the time-to-digital converter (TDC). The RF transmitter area occupies only 0.54 mm/sup 2/ and the current consumption is 49 mA at 1.5 V supply and 4 mW of RF output, and includes the companion DSP. This proves attractiveness and competitiveness of the \"digital RF\" approach whose goal is to replace RF functions with high-speed digital logic gates.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123950291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Advanced circuit techniques for high-performance microprocessor and low-power DSPs 高性能微处理器和低功耗dsp的先进电路技术
S. Mathew, R. Krishnamurthy, M. Anders, S. Hsu, S. Borkar
{"title":"Advanced circuit techniques for high-performance microprocessor and low-power DSPs","authors":"S. Mathew, R. Krishnamurthy, M. Anders, S. Hsu, S. Borkar","doi":"10.1109/DCAS.2004.1360432","DOIUrl":"https://doi.org/10.1109/DCAS.2004.1360432","url":null,"abstract":"This article presents the challenges and solutions for a high-performance microprocessors and low-power digital signal processing chips. It discusses the high-performance power-efficient execution core such as the 6.5 GHz single-rail domino 32-bit Han-Car ALU; the 4 GHz semi-dynamic 32-bit sparse-tree AGU. It also deals with leakage-tolerant register files; conditional/burn-in keeper; pseudo-static bitlines; low-power datapaths for DSP applications; and the 1 GHz 16-bit static multiplier.","PeriodicalId":185376,"journal":{"name":"Proceedings of the 2004 IEEE Dallas/CAS Workshop Implementation of High Performance Circuits","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129135940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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