1.3 nm CMOS 2.4 GHz全数字射频频率合成器的高速数字电路

R. Staszewski, J. Wallberg, Jinseok Koh, P. Balsara
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引用次数: 6

摘要

我们提出了高速数字电路,包括有史以来第一个全数字2.4 GHz频率合成器和发射机,符合蓝牙规范。该芯片采用数字130纳米CMOS工艺,无模拟扩展,具有每mm/sup / 150 kgate的高逻辑门密度。发射机架构基于全数字锁相环(AD-PLL),采用数字技术从头开始构建,利用深亚微米CMOS工艺的高速和高密度,同时避免其对电压分辨率的较弱处理。我们还提出了一种用于该设计的高性能触发器。它具有低clk到q延迟和负设置时间。由于触发器沿垂直轴对称,因此在时间-数字转换器(TDC)中,分辨率窗口对于上升和下降数据转换是对称的。射频发射器面积仅为0.54 mm/sup /,在1.5 V电源和4 mW射频输出下的电流消耗为49 mA,并包括配套DSP。这证明了“数字射频”方法的吸引力和竞争力,其目标是用高速数字逻辑门取代射频功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-speed digital circuits for a 2.4 GHz all-digital RF frequency synthesizer in 130 nm CMOS
We present high-speed digital circuits that comprise the first ever reported all-digital 2.4 GHz frequency synthesizer and transmitter that meet the Bluetooth specifications. The chip is built in a digital 130 nm CMOS process with no analog extensions and features high logic gate density of 150 kgates per mm/sup 2/. The transmitter architecture is based on an all-digital phase-locked loop (AD-PLL), which is built from the ground up using digital techniques that exploit high speed and high density of a deep-submicron CMOS process while avoiding its weaker handling of voltage resolution. We also present a high-performance flip-flop used in this design. It features low CLK-to-Q delay and negative setup time. Because the flip-flop is symmetrical along the vertical axis, the resolution window is symmetrical for rising and falling data transitions in the time-to-digital converter (TDC). The RF transmitter area occupies only 0.54 mm/sup 2/ and the current consumption is 49 mA at 1.5 V supply and 4 mW of RF output, and includes the companion DSP. This proves attractiveness and competitiveness of the "digital RF" approach whose goal is to replace RF functions with high-speed digital logic gates.
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