Impact of selective process bias (SPB) of interconnects on circuit delay

M. Kulkarni, N. Nagaraj, A. Marshall, Viet Le
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引用次数: 4

Abstract

Interconnect parasitics are playing an increasingly important role in circuit performance as we move into the nanometer era of semiconductor technology. Hence accounting for interconnect process effects such as selective process bias (SPB) is becoming important for accurate circuit performance simulations. In this paper, the impact of SPB on circuit delay is demonstrated by studying its effect on capacitance, resistance, ring oscillator speed, and delay of commonly used ASIC cells. Simulations with and without SPB and comparison to measurements of ring oscillator structures in 90 nm process technology show how accounting for SPB increases the accuracy in prediction of ring oscillator speed.
互连选择性工艺偏置(SPB)对电路延迟的影响
随着半导体技术进入纳米时代,互连寄生在电路性能中起着越来越重要的作用。因此,考虑互连过程的影响,如选择过程偏置(SPB),对于精确的电路性能模拟变得非常重要。本文通过研究SPB对常用ASIC单元的电容、电阻、环振速度和延迟的影响,论证了SPB对电路延迟的影响。有SPB和没有SPB的模拟以及与90纳米工艺中环形振荡器结构的测量结果的比较表明,考虑SPB如何提高环形振荡器速度预测的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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