1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)最新文献_第7页

Highly reliable MIM capacitor technology using low pressure CVD-WN cylinder storage-node for 0.12 /spl mu/m-scale embedded DRAM 采用低压CVD-WN圆柱存储节点的高可靠性MIM电容技术，用于0.12 /spl mu/m级嵌入式DRAM

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799329

S. Kamiyama, J. M. Drynan, Y. Takaishi, K. Koyama

引用次数: 6

Fully functional 0.5-/spl mu/m 64-kbit embedded SBT FeRAM using a new low temperature SBT deposition technique 全功能0.5-/spl mu/m 64 kbit嵌入式SBT FeRAM采用新的低温SBT沉积技术

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799382

T. Eshita, K. Nakamura, M. Mushiga, A. Itho, S. Miyagaki, H. Yamawaki, M. Aoki, S. Kishii, Y. Arimoto

引用次数: 5

A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure 采用硅化钴环外基结构的0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS技术

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799387

H. Suzuki, H. Yoshida, Y. Kinoshita, H. Fujii, T. Yamazaki

引用次数: 1

A novel simple shallow trench isolation (SSTI) technology using high selective CeO/sub 2/ slurry and liner SiN as a CMP stopper 一种新型的简单浅沟隔离(SSTI)技术，使用高选择性的CeO/sub - 2/泥浆和尾管SiN作为CMP堵塞剂

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799392

T. Park, J.Y. Kim, K.W. Park, H. Lee, H. Shin, Y. Kim, M.H. Park, H. Kang, M.Y. Lee

引用次数: 3

Submicron CMOS thermal noise modeling from an RF perspective 基于射频视角的亚微米CMOS热噪声建模

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799388

J.J. Ou, Xiaodong Jin, Chenming Hu, P. Gray

引用次数: 19

High performance and highly reliable deep submicron CMOSFETs using nitrided-oxide 高性能和高可靠的深亚微米cmosfet使用氮化氧化物

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799371

K. Irino, Y. Tamura, T. Nakanishi, M. Shigeno, K. Hikazutani, M. Higashi, K. Takasaki

引用次数: 5

Device and reliability of high-k Al/sub 2/O/sub 3/ gate dielectric with good mobility and low D/sub it/ 器件和可靠性高k Al/sub 2/O/sub 3/栅极电介质具有良好的迁移率和低D/sub it/

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799380

A. Chin, C. Liao, C.H. Lu, W. Chen, C. Tsai

引用次数: 25

Node connection/quantum phase-shifting mask-path to below 0.3-/spl mu/m pitch, proximity effect free random interconnect and memory patterning 节点连接/量子相移掩膜路径低于0.3-/spl mu/m间距，邻近效应无随机互连和记忆模式

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1116/1.590997

Hiroshi Fukuda

引用次数: 3

Smart pockets-total suppression of roll-off and roll-up [MOSFET doping] 智能口袋-完全抑制滚出和卷起[MOSFET掺杂]

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799355

R. Gwoziecki, T. Skotnicki

引用次数: 17

A novel high performance and reliability p-type floating gate n-channel flash EEPROM 一种新型高性能、可靠性高的p型浮栅n通道闪存EEPROM

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799319

S.S. Chung, C. Yih, S. Liaw, Z. Ho, S.S. Wu, C. Lin, D. Kuo, M. Liang

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引用次数: 9