Fully functional 0.5-/spl mu/m 64-kbit embedded SBT FeRAM using a new low temperature SBT deposition technique

Abstract

0.5 /spl mu/m design rule embedded 64 kbit SBT (SrBi/sub 2/(Ta,Nb)/sub 2/O/sub 9/) FeRAMs (ferroelectric RAM) are fabricated using a new low temperature SBT deposition technique. The developed deposition technique has successfully lowered SBT crystallization temperature from 800/spl deg/C to 700/spl deg/C, resulting in co-fabrication of FeRAM and fine CMOS logic devices with W plugs. The fabricated devices are proven to be fully functional.