1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)最新文献_第6页

A self-aligned stacked capacitor using novel Pt electroplating method for 1 Gbit DRAMs and beyond 一种用于1gb及以上dram的新型Pt电镀自对准堆叠电容器

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799361

H. Horii, Byoung Taek Lee, Han Jin Lim, Suk Ho Joo, Chang Seok Kang, Cha Young Yoo, Hong Bae Park, Wan Don Kim, Sang In Lee, Moon Yong Lee

引用次数: 3

Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS 利用垂直高压氮化氧栅绝缘子改善深亚微米射频和模拟CMOS的1/f噪声

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799372

H. Kimijima, B. Evans, B. Acker, J. Bloom, H. Mabuchi, Dim-Lee Kwong, E. Morifuji, T. Yoshitomi, H. Momose, M. Kinugawa, H. Iwai

引用次数: 15

A 0.22 /spl mu/m CMOS-SOI technology with a Cu BEOL 一个0.22 /spl mu/m CMOS-SOI技术与Cu BEOL

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799317

A. Ajmera, J. Sleight, F. Assaderaghi, R. Bolam, A. Bryant, M. Coffey, H. Hovel, J. Lasky, E. Leobandung, W. Rausch, D. Sadana, D. Schepis, L. Wagner, K. Wu, B. Davari, G. Shahidi

引用次数: 5

0.1 /spl mu/m CMOS with shallow and steep source/drain extensions fabricated by using rapid vapor-phase doping (RVD) 用快速气相掺杂(RVD)制备了0.1 /spl μ m源极和极陡源极扩展的CMOS

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799356

T. Uchino, Y. Kiyota, T. Shiba

引用次数: 2

Substrate enhanced gate current: device design and temperature impact and disturbs in programming flash memories with negative body bias 衬底增强栅极电流:器件设计和温度的影响和干扰在编程具有负体偏置的闪存

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799351

R. Annunziata, T. Ghilardi, M. Tosi

引用次数: 2

Aluminum word line and bit line fabrication technology for COB DRAM using a polysilicon-aluminum substitute 采用多晶硅-铝替代品的COB DRAM的铝字线和位线制造技术

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799327

S. Nakamura, R. Suzuki, M. Fukuda, M. Kobayashi, A. Hatada

引用次数: 2

A 0.18 /spl mu/m high-performance logic technology 一个0.18 /spl mu/m的高性能逻辑技术

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799362

S. Crowder, S. Greco, H. Ng, E. Barth, K. Beyer, G. Biery, J. Connolly, C. Dewan, R. Ferguson, X. Chen, M. Hargrove, E. Nowak, P. McLaughlin, R. Purtell, R. Logan, J. Oberschmidt, A. Ray, D. Ryan, K. Tallman, T. Wagner, V. McGahay, E. Crabbé, P. Agnello, R. Goldblatt, L. Su, B. Davari

引用次数: 3

Suppression of anomalous leakage current in tunnel oxides by fluorine implantation to realize highly reliable flash memory 氟注入抑制隧道氧化物中异常漏电流，实现高可靠性闪存

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799321

M. Ushiyama, A. Satoh, H. Kume

引用次数: 6

Channel engineering for 0.2 /spl mu/m surface channel pMOSFETs using electron beam irradiation 电子束辐照0.2 /spl mu/m表面沟道pmosfet的沟道工程

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799345

J. Ha, S.H. Kim, W.S. Kim, J. Ku, H. Lee, J. Park, K. Fujihara, H. Kang, M.Y. Lee

引用次数: 0

Severe thickness variation of sub-3 nm gate oxide due to Si surface faceting, poly-Si intrusion, and corner stress 由于硅表面覆盖、多晶硅侵入和角应力，亚3nm栅极氧化物的厚度发生了严重变化

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799347

C. Liu, F. Baumann, A. Ghetti, H. Vuong, C. Chang, K. Cheung, J. Colonell, W. Lai, E. J. Lloyd, J. Miner, C. Pai, H. Vaidya, R. Liu, J. Clemens

引用次数: 12