一个0.18 /spl mu/m的高性能逻辑技术

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799362

S. Crowder, S. Greco, H. Ng, E. Barth, K. Beyer, G. Biery, J. Connolly, C. Dewan, R. Ferguson, X. Chen, M. Hargrove, E. Nowak, P. McLaughlin, R. Purtell, R. Logan, J. Oberschmidt, A. Ray, D. Ryan, K. Tallman, T. Wagner, V. McGahay, E. Crabbé, P. Agnello, R. Goldblatt, L. Su, B. Davari

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引用次数: 3

摘要

在本文中，我们描述了一种高性能的0.18 /spl mu/m逻辑技术，该技术采用双金属化铜和高密度SRAM存储器。本地互连技术使我们能够制造小至3.84 /spl mu/m/sup 2/的SRAM单元。我们证明，在这一代，铜金属化继续表现出优于铝基技术的性能优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.18 /spl mu/m high-performance logic technology

In this paper, we describe a high-performance 0.18 /spl mu/m logic technology with dual damascene copper metallization and dense SRAM memory. Local interconnect technology allows us to fabricate SRAM cells as small as 3.84 /spl mu/m/sup 2/. We demonstrate that copper metallization continues to exhibit performance advantages over aluminum-based technologies in this generation.

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来源期刊

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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