0.1 /spl mu/m CMOS with shallow and steep source/drain extensions fabricated by using rapid vapor-phase doping (RVD)

We have developed an advanced 0.1 /spl mu/m CMOS technology to form 39 nm deep p-type junctions with sheet resistance as low as 630 /spl Omega//sq using two techniques in combination: rapid vapor-phase doping (RVD) and solid-phase diffusion (SPD). These RVD- and SPD-devices have shown excellent short channel characteristics down to 0.1 /spl mu/m effective channel length and 40% higher maximum drain current compared with conventional devices with ion implanted source/drain extensions (SDEs), and high-speed circuit performance. We have also investigated the effect of the SDE structure on device performance. We found that a gate-extension overlap of 0.05 /spl mu/m enabled excellent DC and high-speed circuit performance in 0.1-/spl mu/m devices.