{"title":"Suppression of anomalous leakage current in tunnel oxides by fluorine implantation to realize highly reliable flash memory","authors":"M. Ushiyama, A. Satoh, H. Kume","doi":"10.1109/VLSIT.1999.799321","DOIUrl":null,"url":null,"abstract":"By analyzing charge retention characteristics, we found that a flash memory with a critical tunnel oxide thickness has cells with anomalous threshold voltage (V/sub th/) lowering. We proposed a model where the traps near the poly-Si gate/tunnel oxide interface generate anomalous leakage current in the voltage range of 0-1 V, and the trapping/detrapping of electrons into the traps dominates the V/sub th/ distribution. We succeeded in suppressing the anomalous leakage current of the tunnel oxide by fluorine implantation into the Si substrate.","PeriodicalId":171010,"journal":{"name":"1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1999.799321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
By analyzing charge retention characteristics, we found that a flash memory with a critical tunnel oxide thickness has cells with anomalous threshold voltage (V/sub th/) lowering. We proposed a model where the traps near the poly-Si gate/tunnel oxide interface generate anomalous leakage current in the voltage range of 0-1 V, and the trapping/detrapping of electrons into the traps dominates the V/sub th/ distribution. We succeeded in suppressing the anomalous leakage current of the tunnel oxide by fluorine implantation into the Si substrate.