A 0.18 /spl mu/m high-performance logic technology

Abstract

In this paper, we describe a high-performance 0.18 /spl mu/m logic technology with dual damascene copper metallization and dense SRAM memory. Local interconnect technology allows us to fabricate SRAM cells as small as 3.84 /spl mu/m/sup 2/. We demonstrate that copper metallization continues to exhibit performance advantages over aluminum-based technologies in this generation.