电子束辐照0.2 /spl mu/m表面沟道pmosfet的沟道工程

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799345

J. Ha, S.H. Kim, W.S. Kim, J. Ku, H. Lee, J. Park, K. Fujihara, H. Kang, M.Y. Lee

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引用次数: 0

摘要

首次研究了电子束辐照控制0.2 /spl μ m表面沟道pmosfet沟道掺杂谱的方法。结果表明:当EB直接辐照pmosfet时，沟道掺杂剂通过后续退火沿EB诱导的点缺陷重新分布;与控制过程相比，EB处理不仅使驱动电流增加14%，而且使pmosfet的结电容降低20%，尽管EB处理会导致反向短通道效应。经EB处理的样品没有发现栅氧化物可靠性的退化。

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Channel engineering for 0.2 /spl mu/m surface channel pMOSFETs using electron beam irradiation

The electron beam (EB) irradiation process has been investigated to control the channel dopant profile of 0.2 /spl mu/m surface channel pMOSFETs for the first time. The results show that the channel dopants are redistributed along the EB-induced point defects by subsequent annealing when the EB is used to directly irradiate the pMOSFETs. As compared to the control process, EB treatment not only increases drive current by 14% but also reduces junction capacitance by 20% in pMOSFETs, despite the fact that EB treatment causes a reverse short channel effect. No degradation of the gate oxide reliability was identified for the EB treated sample.

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1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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