1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)最新文献_第8页

A self-aligned split-gate flash EEPROM cell with 3-D pillar structure 一种具有三维柱状结构的自对准分栅闪存EEPROM单元

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799353

F. Hayashi, J. Plummer

引用次数: 1

Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications 在亚1 V以下射频应用中，最大限度地减少深亚微米SOI mosfet的体稳定性

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799323

Y. Tseng, W.M. Huang, M. Mendicino, P. Welch, V. Ilderem, J. Woo

引用次数: 7

High performance Cu interconnects with low-k BCB-polymers by plasma-enhanced monomer-vapor polymerization (PE-MVP) method 采用等离子体增强单体气相聚合(PE-MVP)方法实现低钾bcb聚合物与高性能Cu互连

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799332

J. Kawahara, A. Nakano, S. Saito, K. Kinoshita, T. Onodera, Y. Hayashi

引用次数: 8

A concept of gate oxide lifetime limited by "B-mode" stress induced leakage currents in direct tunneling regime 直接隧穿状态下b模应力诱发泄漏电流限制栅氧化物寿命的概念

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799338

K. Okada, H. Kubo, A. Ishinaga, K. Yoneda

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引用次数: 21

Work function controlled metal gate electrode on ultrathin gate insulators 超薄栅极绝缘子上的功函数控制金属栅极

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI: 10.1109/VLSIT.1999.799357

K. Nakajima, Y. Akasaka, M. Kaneko, M. Tamaoki, Y. Yamada, T. Shimizu, Y. Ozawa, K. Suguro

引用次数: 25