Smart pockets-total suppression of roll-off and roll-up [MOSFET doping]

Abstract

We have demonstrated that with use of pocket implants, there exists an asymptotic threshold voltage-gate length (V/sub th/-L) curve which can only be shifted to shorter device lengths if a larger amount of roll-up and steeper roll-off are allowed. This inherent feature of conventional pockets narrows the technological window for sub-0.1 /spl mu/m MOSFETs. Therefore, we propose a new concept called "smart pockets", enabling total annihilation of roll-up and roll-off and thus offering a perfectly flat V/sub th/-L dependence down to the desired gate length.