High performance and highly reliable deep submicron CMOSFETs using nitrided-oxide

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799371

K. Irino, Y. Tamura, T. Nakanishi, M. Shigeno, K. Hikazutani, M. Higashi, K. Takasaki

引用次数: 5

Abstract

High performance and highly reliable CMOSFETs have been obtained using newly-developed nitrided-oxide processing, which features the localization of the nitrogen profile at the SiO/sub 2/-Si interface, and giving different nitrogen concentrations between the gate and LDD area. In p-MOSFETs, I/sub on/ can be increased by 12%, and I/sub off/ can be decreased by 50% compared with pure oxide. Also, in n-MOSFETs, hot carrier reliability significantly improves.

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高性能和高可靠的深亚微米cmosfet使用氮化氧化物

采用新开发的氮化氧化工艺获得了高性能、高可靠性的cmosfet，其特点是氮分布在SiO/sub - 2/-Si界面上，并在栅极和LDD区域之间提供不同的氮浓度。在p- mosfet中，与纯氧化物相比，I/sub on/可增加12%，I/sub off/可降低50%。此外，在n- mosfet中，热载流子可靠性显着提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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