采用硅化钴环外基结构的0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS技术

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799387

H. Suzuki, H. Yoshida, Y. Kinoshita, H. Fujii, T. Yamazaki

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引用次数: 1

摘要

提出了一种先进的射频混合信号BiCMOS技术。将具有高振荡频率(f/sub max/)的单多晶硅双极晶体管成功地实现在0.15 /spl mu/m双栅CMOS工艺中。为了实现这种双极晶体管，新开发了一种硅化钴(CoSi/sub 2/)环形外基结构。该双极晶体管具有73 GHz的f/sub max/、1.1 dB的最小噪声系数(NF/sub min/)和160 GHz/spl middot/V的截止频率发射器到集电极击穿电压(f/sub T//spl middot/BV/sub CEO/)产品，可与先前报道的基于sigi的技术相竞争。

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A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

This paper presents an advanced RF mixed-signal BiCMOS technology. A single-polysilicon bipolar transistor with a high maximum frequency of oscillation (f/sub max/) is successfully implemented into a 0.15 /spl mu/m dual gate CMOS process. To achieve such a bipolar transistor, a cobalt silicide (CoSi/sub 2/) ring-shaped extrinsic-base structure is newly developed. This bipolar transistor demonstrates 73 GHz f/sub max/, minimum noise figure (NF/sub min/) of 1.1 dB and a cut-off frequency emitter-to-collector breakdown voltage (f/sub T//spl middot/BV/sub CEO/) product of 160 GHz/spl middot/V, which is competitive with previously reported SiGe-based technology.

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来源期刊

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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