A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

Abstract

This paper presents an advanced RF mixed-signal BiCMOS technology. A single-polysilicon bipolar transistor with a high maximum frequency of oscillation (f/sub max/) is successfully implemented into a 0.15 /spl mu/m dual gate CMOS process. To achieve such a bipolar transistor, a cobalt silicide (CoSi/sub 2/) ring-shaped extrinsic-base structure is newly developed. This bipolar transistor demonstrates 73 GHz f/sub max/, minimum noise figure (NF/sub min/) of 1.1 dB and a cut-off frequency emitter-to-collector breakdown voltage (f/sub T//spl middot/BV/sub CEO/) product of 160 GHz/spl middot/V, which is competitive with previously reported SiGe-based technology.