Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)最新文献_第2页

Correlation of lifetimes from CVS and RVS using the 1/E-model for thermally grown oxides on polysilicon 用1/ e模型计算多晶硅上热生长氧化物的CVS和RVS寿命的相关性

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515836

A. Martin, P. O'Sullivan, A. Mathewson

{"title":"Correlation of lifetimes from CVS and RVS using the 1/E-model for thermally grown oxides on polysilicon","authors":"A. Martin, P. O'Sullivan, A. Mathewson","doi":"10.1109/IRWS.1994.515836","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515836","url":null,"abstract":"Accelerated stress measurements such as constant voltage stress (CVS) and ramped voltage stress (RVS) are commonly used in industry for the evaluation of oxide lifetimes. The main advantage of RVS over CVS is the short measurement time. Therefore, RVS is widely used, especially, in short dielectric screens and, lifetimes are extrapolated from the RVS measurement results. For this lifetime extrapolation a correlation between RVS data and CVS lifetimes is assumed. This correlation between CVS and RVS results is investigated for six oxides which had been thermally grown from polysilicon. CVS and RVS measurements were performed over a wide range of bias conditions and the measurement results were directly compared. This comparison showed that RVS increases oxide lifetimes. The current-time characteristics were studied in order to find the cause of the increased RVS lifetimes. They indicated lower currents for RVS than for CVS at equal bias voltage levels. Further measurements were carried out to study the effect of a RVS prior to CVS. Findings from these measurements with pre-stressed oxides confirmed the RVS lifetime increase which had been seen earlier. The increase in RVS lifetimes is critical for the prediction of oxide lifetimes at operating voltage. This increase has to be taken into account when lifetimes are predicted from RVS results. If it is not oxide lifetimes will be overestimated.","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129806056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Wafer Level Reliability Utilization and Trends 晶圆级可靠性利用率和趋势

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515842

E. Achee

{"title":"Wafer Level Reliability Utilization and Trends","authors":"E. Achee","doi":"10.1109/IRWS.1994.515842","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515842","url":null,"abstract":"This discussion group sought to bring greater understanding of the types and amount of wafer level reliability testing that are used throughout the semiconductor industry. With a greater understanding of what each company is actually practicing in their individual WLR efforts and how these programs have benefited reliability improvements in products, we can change or expand our existing programs uo provide added value. VVe are also looking to highlight the difference between WLR testing that is used as a ongoing monitor and testing that is a true reliability indicator for product. The ultimate goal is to be able to make fact and data based decisions from wafer level testing to prevent us from having to rely on lengthy package level testing results. 'The discussion group was structured to fist identify some of the reasons that we are currently forced to disposition deviate product without the appropriate data. When engineering level data is not available, the decision making process can default to non data based decision making due to issues like economics, time, conjecture, or misuse of data. The second step was to identify the WLR activities and capabilities of the companies represented and the failure mechanism each test monitors or targets. This is a good industry poll of the actual activities in use or final development today and served to show the level of WLR implementation throughout the industry. Slide 2 shows these results. The next step is to identify the actual reliability issues we see today within our industry or companies. These are supposed to be actual failure mechanisms seen today and not mechanisms that monitors are in place to detect. With a comprehensive list of these failure mechanisms, we can identify the existing WLR testing available for the mechanism or identify mechanisms for which we have no current method of testing with current WLR methodologies. Slides 3 & 4 shows the resulting list of failure mechanisms and the WLR tests identified to address these mechanisms. The discussion showed that the companies using particular WLR tests were not necess","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130258154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Degradation of off-state leakage in PMOS transistors under hot carrier injection 热载流子注入下PMOS晶体管失态泄漏的退化

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515827

C.H.J. Huang, T. Rost, J. McPherson

引用次数: 3

A new index for gate oxide reliability characterization 一种新的栅极氧化物可靠性表征指标

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515838

B. Lisenker

引用次数: 0

Whole-chip ESD protection for CMOS VLSI/ULSI with multiple power pins 多电源引脚CMOS VLSI/ULSI的全片ESD保护

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515839

M. Ker, Chung-Yu Wu, Tao Cheng, M.J.-N. Wu, Talee Yu, A.C. Wang

引用次数: 13

Evaluation of self-heating in SOI CMOS ULSI SOI CMOS ULSI中自热特性的评价

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515832

D. Dallmann, K. Shenai

引用次数: 2

Evaluation of the predictive capability of Berkeley's hot-carrier reliability model 伯克利热载波可靠性模型的预测能力评估

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515848

A. Meehan, P. O'Sullivan, P. Hurley, A. Mathewson

引用次数: 0

Self-stressing structures for wafer-level oxide breakdown to 200 MHz 用于晶圆级氧化物击穿至200 MHz的自应力结构

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515837

E. Snyder, D. Tanner, M.R. Bowles, S. Swanson, C. Anderson, J. P. Perry

引用次数: 3

Antifuse reliability and link formation models 抗熔断可靠性和链路形成模型

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515833

A. Iranmanesh, Y. Karpovich, Sukyoon Yoon

引用次数: 1

BUILDING-IN RELIABILITY DISCUSSION GROUP: CUSTOMER/SUPPLIER RELATIONSHIPS 建立可靠性讨论小组:客户/供应商关系

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515840

W. K. Gladden

引用次数: 0