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Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)最新文献

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A scalable thermal mechanical test chip for package characterization and qualifications 一个可扩展的热机械测试芯片的封装特性和资格
Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515825
J.M. Duffalo, S. Domer, R. Hollstein, A.K. Hullinger, A. Niederkorn, N.J. Wecker
{"title":"A scalable thermal mechanical test chip for package characterization and qualifications","authors":"J.M. Duffalo, S. Domer, R. Hollstein, A.K. Hullinger, A. Niederkorn, N.J. Wecker","doi":"10.1109/IRWS.1994.515825","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515825","url":null,"abstract":"A thermal mechanical test chip (TMTC) has been designed to reduce the cycle time and cost of package reliability qualifications. The TMTC moves package reliability assessment closer to the package and assembly development cycle by breaking the tie between silicon qualification and package qualification. This approach comprehensively addresses both the mechanical and the thermal reliability issues of package assembly without the added design and manufacturing costs of a full flow silicon test chip.","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129041654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Keynote Address 主题演讲
Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515817
Ping Yang
{"title":"The Keynote Address","authors":"Ping Yang","doi":"10.1109/IRWS.1994.515817","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515817","url":null,"abstract":"","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"76 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132027253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implant damage evaluation using SPIDER 使用SPIDER评估种植体损伤
Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515835
J. Mitros, J. Liu, D. Chan
{"title":"Implant damage evaluation using SPIDER","authors":"J. Mitros, J. Liu, D. Chan","doi":"10.1109/IRWS.1994.515835","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515835","url":null,"abstract":"SPIDER (SEMATECH Process-Induced Damage Effect Revealer) is a test vehicle containing a variety of test structures for evaluation of electrical damage during integrated circuit manufacturing. Each of its test modules is designed to characterize damage from a specific process or sequential processes, such as implant and etch at different levels. The test modules used in this study consist of MOS transistors with each of their gates connected to a polysilicon rectangular antenna over field oxide. The area ratio of the polysilicon antenna to gate varies from 62,220:1 to 20:1. The test procedure is as follows. First basic parameters of MOS transistor are measured. Subsequently, the gate oxide is stressed by Fowler-Nordheim (F-N) stress at a constant current density of 5 nA/cm2. The same MOS transistor parameters are measured again, then retested; its oxide is stressed by a constant current density of 5 nA/cm2. Then the MOS transistor parameters are measured again. The FN stress reveals eventual latent damage passivated by annealing which always follows the damage causing process. The test devices were manufactured using a standard CMOS process.","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127304540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
DEGRADATION OP OFF-STATE LEAKAGE IN PMOS TRANSISTORS UNDER HOT CARRIER INJECTION 热载流子注入下pmos晶体管的劣化失态泄漏
Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1900-01-01 DOI: 10.1109/IRWS.1994.515828
C.H.J. Huang, T. Rost, J. McPherson
{"title":"DEGRADATION OP OFF-STATE LEAKAGE IN PMOS TRANSISTORS UNDER HOT CARRIER INJECTION","authors":"C.H.J. Huang, T. Rost, J. McPherson","doi":"10.1109/IRWS.1994.515828","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515828","url":null,"abstract":"","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128990991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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