Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)最新文献

Case study: MOSFET instability due to charging of remnant stringers from a disposable polysilicon spacer process 案例研究:由于一次性多晶硅间隔工艺中残余串的充电导致的MOSFET不稳定

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515845

J. Miller, H.L. Hegedus, V. Kaushik

{"title":"Case study: MOSFET instability due to charging of remnant stringers from a disposable polysilicon spacer process","authors":"J. Miller, H.L. Hegedus, V. Kaushik","doi":"10.1109/IRWS.1994.515845","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515845","url":null,"abstract":"Incompletely etched polysilicon \"stringers\" can produce a wide range of failure mechanisms in advanced integrated circuits. Parasitic leakage paths are often the direct cause of failures, but stringers can also form unwanted implant masks, or even act as the conducting channels of parasitic thin film transistors. A failure analysis case study was presented in which remnant stringers from a disposable polysilicon LDD spacer process led to large scale product fallout during burn-in. As a first step in the investigation, a series of circuit and transistor level stress experiments were performed. These produced evidence of significant transistor instability as the likely failure mechanism. Next a detailed Cross-section Transmission Electron Microscopy (XTEM) analysis was performed in order to relate the microstructure of the transistors to the observed electrical performance. The XTEM images clearly showed very small (30-70 nm) remnant polysilicon stringers at the edge of the gate poly reoxidation, above the transistor source/drain regions. The stringers were attributed to incomplete removal of the sidewall spacer polysilicon. This was confirmed by XTEM images of devices pulled from the fab before spacer etch. Finally, additional transistor electrical tests were performed to prove that these stringers acted as parasitic floating gates, gradually charging under saturation bias conditions. It was shown that this trapped charge, located just above the drain region, had a profound effect on subsequent device operation.","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124901957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Improved electromigration test techniques of layered metal structures at wafer level 晶片级层状金属结构的改进电迁移测试技术

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515849

H. Katto

引用次数: 0

Circuit-level electrothermal simulation techniques for designing output protection devices 设计输出保护装置的电路级电热模拟技术

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515831

S. Ramaswamy, E. Rosenbaum, S. Kang

引用次数: 3

A model of temperature cycling performance in plastic encapsulated packages 塑料封装中温度循环性能的模型

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515824

P. Syndergaard, J. Young

引用次数: 1

The practical side of thin dielectric monitoring and characterization 薄介质监测和表征的实用方面

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515818

J. Suehle, C. Messick, B. Langley

引用次数: 4

Assembly test chips and circuits for detecting and measuring mechanical damage in packaged ICs 组装测试芯片和电路，用于检测和测量封装集成电路中的机械损伤

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515823

J. Sweet

引用次数: 2

Investigation of plasma process damage in a thick gate oxide, large geometry, process using protected devices 等离子体工艺损伤的研究在一个厚栅极氧化物，大的几何形状，过程中使用保护装置

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515826

M. Dion, J. Hackenberg, D. Hemmenway, L.G. Pearce, J. W. Werner

引用次数: 0

Standardization of wafer level reliability techniques-JEDEC 14.2 晶圆级可靠性技术标准化- jedec 14.2

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515847

M. Dion

{"title":"Standardization of wafer level reliability techniques-JEDEC 14.2","authors":"M. Dion","doi":"10.1109/IRWS.1994.515847","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515847","url":null,"abstract":"Summary form only given. JEDEC stands for: Joint Electronic Device Engineering Council and is sometimes known as simply \"The Council\", and is the engineering standardization body ofthe Electronic Industry Association (EIA). Promoting development and standardization of test methods, nomenclature and product characterization are primary functions of the Council. The Council establishes Committees to conduct its standardization activities, with the primary function of each Committee being to propose standards, procedures, etc., and submit them to the Council for action or approval. Reliability is handled by JEDEC Committee 14 (JC 14) \"Committee on Quality and Reliability of Solid State Products\". As its title implies JC 14 is responsible for generation and maintenance of quality and reliability standards for solid state products. Currently there are seven active JC 14 subcommittees, one of which is JC 14.2, whose scope includes generation of terms, definitions and establishment and/or review of specifications and standards relating to wafer level assessment of semiconductor devices. This committee also provides a forum for discussion of wafer level reliability assessment of all types. Most methods, techniques and standards developed for wafer level assessment work equally well with packaged devices.","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126876601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region 由于速度饱和区的长度，在高温下热载子应力下nMOSFET的退化加剧

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515829

H. Hwang, J. Goo, H. Kwon, Hyungsoon Shin

引用次数: 0

Discussion Group Summary Report Qualification Elimination 讨论小组总结报告资格淘汰

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI: 10.1109/IRWS.1994.515841

D. L. Erhart

{"title":"Discussion Group Summary Report Qualification Elimination","authors":"D. L. Erhart","doi":"10.1109/IRWS.1994.515841","DOIUrl":"https://doi.org/10.1109/IRWS.1994.515841","url":null,"abstract":"This discussion group was directed toward the possibility of eliminating the traditional product qualification. The basic objective of this discussion group was to explore the issues or preconceptions that were limiting us to the traditional qualification approach. The mechanics of the two discussion group sessions were fairly straightforward. I had prepared several overhead transparencies that were meant to provide a basis for exploring our existing qualification and reliability risk management process. I started my presentation with an overview of the origins of our current methodology. As questions arose or as comments or clarifications were offered by session attendees, we stopped the formal presentation and explored the issue or question further. If no further discussion ensued, I returned to my prepared slides. We proceeded in this way until our time ran out. The level of participation by session attendees was very high in both sessions. The backgrounds and interests of the attendees in the two sessions were quite different. As a result, the issues discussed, and the discussion points that were emphasized in the two sessions were generally different. In the following paragraphs I will attempt to capture the key points from both sessions. A predominant theme from both sessions was that the customer-supplier relationship would determine the likelihood of shifting from the traditional qualification methodology to any alternative procedure. It was suggested that vertically integrated companies may have an advantage since they operate on both sides of the customersupplier relationship. Representatives from a few vertically integrated companies seemed to support this belief. In the absence of an internal customer-supplier relationship, several people mentioned that they were cultivating very close partnerships with their key customers. They commented that there was a lack of trust between suppliers and customers. Specific instances where suppliers selectively shared qualification results with customers were offered by customer and supplier representatives in the session. The suppliers claimed that in some situations the sophistication of the customer might dictate the level of openness that a supplier would offer to a customer. In their assessment, the more sophisticated the customer was, the more the details (in this case the details are possible qualification failures or concerns about new failure modes) of the reliability assessment could be shared. Unsophisticated customers were generally thought to be incapable of dealing with the details, and tended to be more dogmatic in their qualification requirements. Although the reasons for this mistrust were varied, there was general agreement that without a higher degree of trust, primarily on the part of customers, any attempt to unilaterally change the rules of the “Qualification Game” would fail. A key discussion topic was how to implement anything other than the historical qualification. The con","PeriodicalId":164872,"journal":{"name":"Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133216394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0