Investigation of plasma process damage in a thick gate oxide, large geometry, process using protected devices

M. Dion, J. Hackenberg, D. Hemmenway, L.G. Pearce, J. W. Werner
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Abstract

Plasma process induced damage is a major device issue. A non-uniform plasma can generate significant MOS gate damage and this damage is commonly reported on state-of-the-art thin oxides and small devices. This work will describe plasma damage observed on a thick gate, large geometry process. Protected devices were used to confirm plasma damage. Protected devices for study of damage along with issues with fuse protection are discussed. Blowing of fuses may be better than laser cutting and fuse protection of all device nodes may not be needed.
等离子体工艺损伤的研究在一个厚栅极氧化物,大的几何形状,过程中使用保护装置
等离子体过程引起的损伤是一个主要的设备问题。非均匀等离子体可以产生严重的MOS栅极损伤,这种损伤通常在最先进的薄氧化物和小型器件上报道。这项工作将描述在厚栅极、大几何过程中观察到的等离子体损伤。保护装置被用来确认等离子体损伤。讨论了用于损伤研究的保护装置以及保险丝保护问题。熔断器的熔断可能比激光切割更好,并且可能不需要对所有设备节点进行熔断保护。
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