Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region

Abstract

The anomalous behavior of nMOSFET's hot carrier reliability characteristics have been investigated at an elevated temperature. We found that degradations of saturation drain current and ring oscillator falling time are enhanced at high temperature. This anomalous behavior causes a significantly impact on the device reliability for future deep submicron devices at high operating temperatures.