SOI CMOS ULSI中自热特性的评价

Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS) Pub Date : 1994-10-16 DOI:10.1109/IRWS.1994.515832

D. Dallmann, K. Shenai

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引用次数: 2

摘要

在深亚微米尺寸上，SOI技术可能比大块硅具有许多优势。然而，埋入SiO/ sub2 /层的存在会导致自热，从而损害器件性能。当器件尺寸从1.0 /spl mu/m缩放到0.25 /spl mu/m时，研究了自热对SOI MOSFET性能的影响。结果表明，在静态条件下严重的自热对集成电路的可靠性问题有影响。

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Evaluation of self-heating in SOI CMOS ULSI

SOI technology potentially offers numerous benefits over bulk silicon at deep submicron dimensions. However, the presence of a buried SiO/sub 2/ layer causes self-heating to occur which can impair device performance. The effects of self-heating on SOI MOSFET performance are examined as device dimensions are scaled from 1.0 /spl mu/m to 0.25 /spl mu/m. Results show severe self-heating under static conditions which has implications for IC reliability issues.

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Proceedings of 1994 IEEE International Integrated Reliability Workshop (IRWS)

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