抗熔断可靠性和链路形成模型

A. Iranmanesh, Y. Karpovich, Sukyoon Yoon
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引用次数: 1

摘要

反熔丝器件已用于各种可编程电路,其在高性能、高密度FPGA产品中的应用正在急剧增加。防熔断器的吸引力在于其相对较小的尺寸、低导通电阻和低关断电容。尽管反引信在概念上是简单的结构,但它们的行为并没有得到很好的理解。本报告试图阐明反引信的链路形成和可靠性。根据所建立的模型,编程过程中的链接形成是由a-Si和部分电极的熔化和凝固引起的。此外,在固定电压范围内,由于链路熔化导致的链路断开故障也会发生。这些模型也可以推广到其他类型的防引信。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Antifuse reliability and link formation models
Antifuse devices have been used for a variety of programmable circuits, and their application for high-performance, high density FPGA products is dramatically increasing. Attractiveness of antifuse stems from its relative small size, low ON resistance, and low OFF capacitance. Even though antifuses are conceptually simple structures, their behavior is not well understood. This report attempt to shed light into the link formation and reliability of antifuses. According to the models presented, link formation during programming is caused by melting and solidification of a-Si and portions of the electrodes. Furthermore, link switch-off failure is shown to occur at fixed voltage range caused by link melting. These models can be extended to the other types of antifuses as well.
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