1978 International Electron Devices Meeting最新文献

{"title":"Bipolar structures for BIMOS VLSI","authors":"E. Hamdy, M. Elmasry","doi":"10.1109/IEDM.1978.189391","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189391","url":null,"abstract":"Recent advances in VLSI has offered many possibilities in mixing MOSFET and Bipolar integrated structures on the same chip. The purpose of this work is to study the integration of bipolar structures in BIMOS VLSI environments. More specifically bipolar structures are studied under the constraints and guidelines of a given MOS technology; e.g. the non-exsistance of a n+underlayer, and the high epitaxial (substrate) resistivity. A bipolar structure, based on merging a multicollector p-n-p transistor with a multiemitter n-p-n transistor is proposed. The structure takes advantage of the availability of clock signals on a MOS chip. It can be used to realise analog, logic, memory, and digital functions. Computer simulation as well as experimental results, show that the structure can perform efficiently in a wide range of BIMOS VLSI technologies.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"30 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123439402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 640 kilopixel CCD imager for space applications","authors":"M. Blouke, J. E. Hall, J. Breitzmann","doi":"10.1109/IEDM.1978.189441","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189441","url":null,"abstract":"Functional 800 × 800 pixel charge coupled device (CCD) imagers have been successfully fabricated and operated. These devices are fabricated using a three level polysilicon gate technology. Pixel size is 15 µm × 15 µm with an active imaging area of 1.44 cm2. The overall dimensions of the chip are 17.8 mm × 17.8 mm. The devices are designed to operate cooled to -100°C, thinned with backside illumination. This paper will discuss the design, fabrication and preliminary operation of these imagers. These devices represent the largest CCDs and are believed to be the largest MOS circuits fabricated to date.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121690548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High performance junction photodiodes for 8-14 &#181;m (Hg,Cd)Te infrared imaging applications","authors":"A. K. Sood, T. Tredwell","doi":"10.1109/IEDM.1978.189447","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189447","url":null,"abstract":"Fabrication of n⁺-p junction photodiodes by boron implantation have been carried out in 8-12 µm p-Hg<inf>0.8</inf>Cd<inf>0.2</inf>Te. These photodiodes exhibit quantum efficiencies and D*λ(1 kHz, 180° FOV, 300 K) in excess of 0.6 and 2.0 × 10¹⁰cm√Hz/W. Measurements of the resistance area product (R<inf>o</inf>A<inf>j</inf>) as a junction of temperature between 77 and 200 K demonstrate that the current in these photodiodes is diffusion limited down to 77 K.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122325016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid infrared imaging arrays","authors":"A. M. Andrews","doi":"10.1109/IEDM.1978.189465","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189465","url":null,"abstract":"Infrared focal planes in intrinsic semiconductors offer advantages over extrinsic semiconductors in both operating temperature and quantum efficiency. Current research on hybrid focal planes is directed toward devices in which detection occurs in an intrinsic narrow energy bandgap semiconductor, and signal processing is accomplished in a silicon multiplexer which is electrically interfaced to the detector array. Two principal hybrid device designs are being developed to sense the incident photon flux: frontside and backside illuminated configurations. These hybrid designs and the approaches using III-V, IV-VI and II-VI alloy systems are described. Furthermore, the devices which incorporate self spectral filtering and detector-multiplexer interface circuits will be described. The operation of existing focal planes and the key technical problems associated with the attainment of practical, high performance hybrid focal planes will be discussed.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132383893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wide bandwidth 10.6 &#181;m (Hg,Cd)Te photodiodes for infrared heterodyne applications","authors":"J. Shanley, L. C. Perry","doi":"10.1109/IEDM.1978.189445","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189445","url":null,"abstract":"This paper reports the lowest noise equivalent power (NEP), approximately 6.2 × 10^-20watts/Hz, ever measured for 10.6 µm n⁺-n^--p⁺(Hg,Cd)Te photodiodes at a frequency of 1750 MHz and at 77 K, as determined by blackbody heterodyne radiometry techniques (1-3). This value of NEP corresponds to an effective heterodyne quantum efficiency of 30%. The devices were fabricated by means of planar processing techniques and capacitance-voltage measurements revealed that the junctions were abrupt and contained a donor concentration in the n^-layer of approximately 4.0 × 10¹⁴to 1.0 × 10¹⁵cm^-3.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116298148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of radiation coupling from high radiance IRED into an optical fiber","authors":"G. Berkstresser, V. Keramidas","doi":"10.1109/IEDM.1978.189514","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189514","url":null,"abstract":"A model is presented to describe coupling of radiation from high radiance IREDs into an optical fiber. This model is applied to judge the effects of junction current density distribution, thickness of the diode window layer, and roughness of the diode surface upon the coupling efficiency into a fiber. The transmission coefficient between the diode window media and the fiber core depends strongly on whether the emitting surface is rough or smooth. This necessitates two separate approaches for treating the radiation flux across the window layer. A rough surface randomizes incident radiation. Thus, a window layer flux treatment is generalized to evaluate the flux contributions to an annulus in the surface plane from all concentric annulii which lie in the junction plane. A smooth surface transmits within a small solid angle of incidence to the diode surface. Thus, the flux transfer is proportional to the emitted radiation from the corresponding position in the junction plane. Several combinations of the IRED source and fiber sink were treated with the above models. For a rough surface diode the flux transmission coefficient across the layer is the dominant factor and there is a strong dependence on the window layer thickness. For a smooth surface diode the transmission coefficient across the diode to fiber interface is dominate and there is only a weak dependence upon the layer thickness. As the window thickness is reduced the flux coefficient for either type of surface approaches unity, and the interface transmission coefficient dominates the total coupling efficiency. The models were tested against observed relative surface brightness distributions for Ga1-xAlxAS -- GaAs single heterojunction IRED. Changing the degree of current crowding by variations of the active layer thickness reveal the smooth surface model to more correctly predict the relative performance, of the diodes. This judgment is further confirmed by a lack of sensitivity in the optical power coupled into a fiber as the window layer is thinned. Using this treatment of the optical coupling characteristics the effects of parameters such as diode geometry, electrical properties of the structure and, surface charactreistics can be assessed. Examples in the performance evaluation of etched well or thick window planar high radiance diodes are presented.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114795605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spectral density of noise in CCDs","authors":"H. Klar, M. Feil, H. Pfleiderer","doi":"10.1109/IEDM.1978.189489","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189489","url":null,"abstract":"Good agreement between theory and measurements is obtained for the spectral density of transfer noise which is the dominant noise source in a SCCD. Within a frequencyband small compared to the baseband of the CCD the achievable signal-to-noise ratio S/N is limited by the noise power in that small frequency range and not by the mean square value. Our considerations show that the spectral density of noise power of a CCD is inverse proportional to the clock frequency fC. Therefore increasing fCimproves the S/N-ratio and enhances the performance of the CCD in band-limited analog communication systems.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128593242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controlled porosity dispenser cathode: Iridium-barium oxide","authors":"L. Falce, R.E. Thomas","doi":"10.1109/IEDM.1978.189376","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189376","url":null,"abstract":"This paper discusses the development of a novel technique of fabrication of a porous metal matrix dispenser cathode based on the iridium-barium oxide system. Studies at the Naval Research Laboratories utilizing surface analysis techniques determined many of the critical parameters such as pore size and matrix thickness and their effect on work function, surface coverage and evaporation rate. These studies led to the development of a cathode that utilized as a matrix a foil of iridium containing an array of holes produced by photolithographic techniques. Cathodes were fabricated and tested in a specially designed vehicle which simulated a real tube environment.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134517077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Breakdown mechanism in short-channel MOS transistors","authors":"E. Sun, J. Moll, J. Berger, B. Alders","doi":"10.1109/IEDM.1978.189459","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189459","url":null,"abstract":"In this paper a new breakdown mechanism in a short channel MOS transistor is proposed based on experimental measurements of substrate currents. We have observed a negative resistance in the substrate current followed by conductivity modulation, similar to the operation of a unijunction transistor during switching. By adding an external substrate resistance, saturation of the substrate current was observed in conjunction with the turn-on of the parasitic NPN (source-substrate-drain) bi-polar transistor. Breakdown of the device will occur when the drain bias reaches BVCEOof this parasitic bipolar transistor. The channel length dependence of the breakdown voltage of the short channel MOS transistor can then be explained by the dependence of BVCEOon the base width.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133418697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GaInAsP/InP lasers and detectors for fiber optics communications at 1.1-1.3 &#181;m","authors":"J. Hsieh","doi":"10.1109/IEDM.1978.189496","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189496","url":null,"abstract":"Diode lasers and avalanche diodes of GaInAsP/InP are under development for the 1.1-1.3 µm wavelength region of current interest for fiber optics applications. Early versions of both of these devices show highly promising performance characteristics. Current state-of-the-art results, as well as a description of the device structures, will be presented.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"185 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121739657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}