{"title":"高性能结光电二极管，用于8-14 µm (Hg,Cd)Te红外成像应用","authors":"A. K. Sood, T. Tredwell","doi":"10.1109/IEDM.1978.189447","DOIUrl":null,"url":null,"abstract":"Fabrication of n<sup>+</sup>-p junction photodiodes by boron implantation have been carried out in 8-12 µm p-Hg<inf>0.8</inf>Cd<inf>0.2</inf>Te. These photodiodes exhibit quantum efficiencies and D*λ(1 kHz, 180° FOV, 300 K) in excess of 0.6 and 2.0 × 10<sup>10</sup>cm√Hz/W. Measurements of the resistance area product (R<inf>o</inf>A<inf>j</inf>) as a junction of temperature between 77 and 200 K demonstrate that the current in these photodiodes is diffusion limited down to 77 K.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High performance junction photodiodes for 8-14 µm (Hg,Cd)Te infrared imaging applications\",\"authors\":\"A. K. Sood, T. Tredwell\",\"doi\":\"10.1109/IEDM.1978.189447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fabrication of n<sup>+</sup>-p junction photodiodes by boron implantation have been carried out in 8-12 µm p-Hg<inf>0.8</inf>Cd<inf>0.2</inf>Te. These photodiodes exhibit quantum efficiencies and D*λ(1 kHz, 180° FOV, 300 K) in excess of 0.6 and 2.0 × 10<sup>10</sup>cm√Hz/W. Measurements of the resistance area product (R<inf>o</inf>A<inf>j</inf>) as a junction of temperature between 77 and 200 K demonstrate that the current in these photodiodes is diffusion limited down to 77 K.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189447\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance junction photodiodes for 8-14 µm (Hg,Cd)Te infrared imaging applications
Fabrication of n+-p junction photodiodes by boron implantation have been carried out in 8-12 µm p-Hg0.8Cd0.2Te. These photodiodes exhibit quantum efficiencies and D*λ(1 kHz, 180° FOV, 300 K) in excess of 0.6 and 2.0 × 1010cm√Hz/W. Measurements of the resistance area product (RoAj) as a junction of temperature between 77 and 200 K demonstrate that the current in these photodiodes is diffusion limited down to 77 K.
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