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Schottky barrier photodiodes in Hg1-xCdxTe Hg1-xCdxTe的肖特基势垒光电二极管
1978 International Electron Devices Meeting Pub Date : 1980-09-01 DOI: 10.1063/1.328363
D. Polla, A. K. Sood
{"title":"Schottky barrier photodiodes in Hg1-xCdxTe","authors":"D. Polla, A. K. Sood","doi":"10.1063/1.328363","DOIUrl":"https://doi.org/10.1063/1.328363","url":null,"abstract":"Schottky Barrier photodiodes have been fabricated on p-Hg<inf>1-x</inf>Cd<inf>x</inf>Te (0.20≤ × ≤ 0.38) with aluminum, chromium, lead and manganese as barrier metals. Various electrical characterizations have been carried out to determine barrier heights and the results are found to be in excellent agreement with theory. These photodiodes have also been used to determine the minority carrier lifetime and diffusion length in p-Hg<inf>1-x</inf>Cd<inf>x</inf>Te.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126536679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Characterization of improved InSb interfaces 改进的InSb接口的特性
1978 International Electron Devices Meeting Pub Date : 1979-09-01 DOI: 10.1116/1.570225
J. Langan, C. Viswanathan, C. A. Merilainen, J. Santarosa
{"title":"Characterization of improved InSb interfaces","authors":"J. Langan, C. Viswanathan, C. A. Merilainen, J. Santarosa","doi":"10.1116/1.570225","DOIUrl":"https://doi.org/10.1116/1.570225","url":null,"abstract":"Improved quality surfaces on n-type InSb have been produced using a low-temperature chemical vapor deposition (LTCVD) of SiO2. Preservation of the thin, natural oxide on the InSb surface through a suitable process results in MIS devices with a surface state density < 1010eV-1cm-2without C-V hysteresis. These results are confirmed by conductance measurements on MIS samples. The chemical identification and thickness of the natural oxide both before and after the LTCVD process was determined by using AES and XPS techniques. These data show a change in the oxidation sate of In depending on the degree to which silane dissociation occurs on the oxide surface. The electrical results on MIS devices correlation with these differences; surface state density degrade to the middle to high 1011eV-1cm-2range for the predominantly heterogeneous reaction resulting from a vertical CVD reactor. The C-V measurements are complicated by the presence of surface potential fluctuations caused by the granularity of the LTCVD oxide.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"832 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117259624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
Improved camera-tube performance with pulsed operation 通过脉冲操作改进了摄像管的性能
1978 International Electron Devices Meeting Pub Date : 1979-02-01 DOI: 10.1109/IEDM.1978.189406
E. Cross, J. Narduzzi
{"title":"Improved camera-tube performance with pulsed operation","authors":"E. Cross, J. Narduzzi","doi":"10.1109/IEDM.1978.189406","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189406","url":null,"abstract":"Improving image-sensing parameters is a high-priority goal in the development of camera-tube (vidicon) television systems. In past efforts to enhance video output from these television systems, the emphasis has been on multiple-frame integrations of a single scene and computer data processing of the recorded video. In the electronic technique discussed in this paper vidicon performance is improved by synchronously controlling the sensing-layer bias. Specifically, camera-tube sensitivity and dynamic response are significantly increased while other tube parameters remain unaffected.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129617166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical and experimental study of polycrystalline GaAs MIS solar cell 多晶砷化镓MIS太阳能电池的理论与实验研究
1978 International Electron Devices Meeting Pub Date : 1978-12-01 DOI: 10.1109/IEDM.1978.189397
T. Bhar, R. Singh, R. Jones, J. Shewchun
{"title":"Theoretical and experimental study of polycrystalline GaAs MIS solar cell","authors":"T. Bhar, R. Singh, R. Jones, J. Shewchun","doi":"10.1109/IEDM.1978.189397","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189397","url":null,"abstract":"In order to understand the photovoltaic effect in polycyrstalline GaAs MIS solar cells, we have studied the grain boundary problem. The grain boundary region width is assumed to be very small compared to the width of the depletion region. The mechanism for current conduction is tunneling through the insulator of a polycrystalline MIS diode. Theoretical investigation on the device parameters as a function of grain size of the crystallites and some preliminary experimental results on polycrystalline GaAs MIS solar cells are presented.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133832271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Write-through on direct view bistable storage tubes 直接视图双稳态存储管上的透写
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189404
L. Virgin, D. Langford, C. Penn
{"title":"Write-through on direct view bistable storage tubes","authors":"L. Virgin, D. Langford, C. Penn","doi":"10.1109/IEDM.1978.189404","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189404","url":null,"abstract":"In Write-through on a direct view bistable storage tube (DVBST), the writing beam excites the storage phosphor but does not cause storage. The write-through image luminance of a DVBST is dependent upon repetition rate (refresh rate), beam voltage, phosphor efficiency, low voltage secondary emission characteristics, beam current density, and stored writing speed. Relatively good agreement between empirical and theoretical studies was achieved. The amount of information (vector-centimeters) that can be presented at an acceptable brightness level is inversely proportional to the repetition rate and directly proportional to the write-thru vector speed. The viewability and quantity of information that can be presented during write-through can be increased with higher beam voltage and higher write-through vector speed.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115388847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Infrared HgCdTe photovoltaic detectors by planar technology 基于平面技术的红外HgCdTe光电探测器
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189446
J. Ameurlaine, J. Antoniazzi, J. Maille, G. Pichard
{"title":"Infrared HgCdTe photovoltaic detectors by planar technology","authors":"J. Ameurlaine, J. Antoniazzi, J. Maille, G. Pichard","doi":"10.1109/IEDM.1978.189446","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189446","url":null,"abstract":"Following years of intensive research and development (1) , (2) , (3) , (4), HgCdTe photovoltaic detectors (photodiodes) have found definite acceptance for infrared detection for commercial and military applications. Many infrared imaging and detection systems operating in the 8 to 12 µm wavelength region and developed during the past few years have almost exclusively incorporated this detector type. A number of infrared systems, particularly in the imaging area, will soon experience an increased development effort to respond to the various needs, in particular, for military night vision. The need for large-scale fabrication can, therefore, be foreseen in the years ahead. In order to be cost-efficient, production must lean toward integrated circuit fabrication techniques. It is, therefore, proper to consider planar technology. From among the two basic detection modes (photovoltaic and photoconductive), only the former responds to these requirements.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123039731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Relating photovoltaic output and spectral response of amorphous, polycrystalline, ribbon, epitaxial and single-crystal MIS solar cells 有关非晶、多晶、带状、外延和单晶MIS太阳能电池的光伏输出和光谱响应
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189358
S. Dey, W. A. Anderson, A. Delahoy, C. Cartier
{"title":"Relating photovoltaic output and spectral response of amorphous, polycrystalline, ribbon, epitaxial and single-crystal MIS solar cells","authors":"S. Dey, W. A. Anderson, A. Delahoy, C. Cartier","doi":"10.1109/IEDM.1978.189358","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189358","url":null,"abstract":"Spectral response and diffusion length characteristics of the various MIS cells developed at Rutgers and previously reported in the literature have been investigated. The cells, designated according to the type of Si substrate used, appear in the following descending order based on the above studies: (1) Monsanto single-crystal Si with a peak quantum efficiency (Q.E.) of 87.4% and a diffusion length (Ln) of 70 µm, (2) Wacker polycrystalline Si, peak Q.E. = 82.8%, Ln= 60 µm, (3) IBM ribbon Si, (4) Epitaxial Si, (5) Mobil-Tyco EFG ribbon Si and (6) amorphous Si. The Q.E. of the Monsanto Si base-line cell is shown to be adequately explained in terms of the wavelength dependence of the collection efficiency and the transmittance of the barrier metal. Good agreement is also shown between theoretical and experimental plots of short-circuit current density (Jsc) versus Ln. The Wacker cell shows best short wavelength response of all the cells studied including a commercial p-n cell having a peak Q.E. of 100% and Ln= 184 µm.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124521482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diffusion current effects in DMOS transistors DMOS晶体管中的扩散电流效应
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189345
D. H. Harper, R.E. Thomas
{"title":"Diffusion current effects in DMOS transistors","authors":"D. H. Harper, R.E. Thomas","doi":"10.1109/IEDM.1978.189345","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189345","url":null,"abstract":"To show the effects of a non-constant impurity profile along the channel of a MOST, a simple numerical model has been developed. The analysis is applied to a DMOST intended for low voltage digital applications. The model accounts for the variation in flat band voltage, substrate potential, and surface mobility along the channel. Results show that diffusion current plays a significant role especially in the 'short channel' mode of DMOST operation. This in part explains why unrealistic parameter values must often be assigned to existing DMOST models to obtain agreement with experimental results.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125882546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The status of CdS/Cu2S solar cell development CdS/Cu2S太阳能电池的发展现状
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189395
J. Meakin
{"title":"The status of CdS/Cu2S solar cell development","authors":"J. Meakin","doi":"10.1109/IEDM.1978.189395","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189395","url":null,"abstract":"A photovoltaic effect in the junction between Cu2S and CdS was reported almost twenty-five years ago. Subsequent efforts to develop a CdS/Cu2S solar cell, first for space applications and then for terrestrial purposes, were generally unsuccessful. The major problems were low conversion efficiency, poor production reproducibility and limited cell durability. A cell development program based on a loss minimization technique has now resulted in major advances in each of these three areas. Energy conversion efficiencies of about 9% have been achieved and the condition governing long usable lifetimes defined. The limiting achievable efficiency for a CdS/Cu2S cell is above 10% and a modified cell using (CdZn)S/Cu2S should be capable of about 15% efficiency.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123421192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Life testing and stability of SnO2/n-Si solar cells SnO2/n-Si太阳能电池寿命测试及稳定性研究
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189360
C. Fishman, T. Feng, A. K. Ghosh
{"title":"Life testing and stability of SnO2/n-Si solar cells","authors":"C. Fishman, T. Feng, A. K. Ghosh","doi":"10.1109/IEDM.1978.189360","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189360","url":null,"abstract":"SnO2/Si solar cells having 10-12% sunlight engineering efficiencies were fabricated by electron beam evaporation of SnO2and by spraying SnCl4onto heated Si. The cells were then encapsulated in various ways and the stability and degradation mechanisms for these cells were examined using SIMS depth profiling and accelerated weather testing. Preliminary results indicate an initial efficiency decrease followed by a slower rate of degradation which decreased as a function of time. Depending upon the cell environment, the fill factor remained constant or decreased by a few percent. The short circuit current remained constant and the Vocdecreased independent of the testing conditions of the cell. A decrease of Voccan indicate a change in junction parameters, oxide thickness or surface state density. It has been suggested that the device degradation may be attributed to diffusion of the grid metals. SIMS analysis indicated the Cr and Al used in grids on earlier cells penetrated through the entire SnO2layer. It is possible that the back contact is forming a junction with the Si and reduces the open circuit voltage of the cell.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123596663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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