1978 International Electron Devices Meeting最新文献_第2页

Carrier recombination in heavily doped planar diodes 重掺杂平面二极管中的载流子复合

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189420

G. Possin, C. Kirkpatrick

引用次数: 0

Anomalous drain current in n-MOSFET's and its suppression by deep ion implantation n-MOSFET异常漏极电流及其深离子注入抑制

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189461

H. Nihira, M. Konaka, H. Iwai, Y. Nishi

引用次数: 6

Effects of channel potential modulation in narrow channel CCD shift registers 窄通道CCD移位寄存器中通道电位调制的影响

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189494

K. Venkateswaran

引用次数: 6

An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layer process 利用外延埋层工艺防止CMOS集成电路锁存的分析

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189394

D. Estreich, A. Ochoa, R. Dutton

引用次数: 65

Prospects for M-I-M tunneling device displays M-I-M隧道装置显示器的前景

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189402

S. Mccarthy, J. Lambe

引用次数: 0

Design trade-offs in Schottky-base I2L—An advanced bipolar technology 肖特基基极I2L—一种先进的双极技术

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189388

A. Bahraman, S. Chang

引用次数: 2

Crossed-field guns analyzed on a deformable mesh 在可变形网格上分析交叉场炮

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189380

R. True

引用次数: 0

A precise model of the transient response of MNOS memory capacitors MNOS存储电容器瞬态响应的精确模型

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189346

M. Powell, L. Jelsma

引用次数: 0

Nitride-based passivation of GaAs for reduced surface state density 氮基钝化降低表面态密度

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189487

T. Hariu, N. Suzuki, K. Matsushita, Y. Shibata

引用次数: 1

GaAs OM CVD MESFET 加斯CVD CVD药房

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189517

H. Morkoç, J. Andrews, V. Abei

{"title":"GaAs OM CVD MESFET","authors":"H. Morkoç, J. Andrews, V. Abei","doi":"10.1109/IEDM.1978.189517","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189517","url":null,"abstract":"Al gate self aligned schottky barrier field effect transistors having gate dimensions of 1.5µ × 300µ and a channel length of 3µ were fabricated in epitaxial layers grown by organometallic chemical vapor deposition. The layers with a net carrier concentration of 1.4 × 1017cm-3were grown at 730°C. The devices exhibited a maximun dc transconductance (gm) of about 30 mmhos. The gmdegradation near the substrate interface appeared to be less than the comparable unbuffered vapor phase epitaxy (VPE) layers. The velocity profile into the active channel layer deduced from the dc performance of the devices indicated an average electron velocity of 1.3 × 107cm/sec which is the same as VPE material. The velocity degraded region was confined to within about 350 Å of the interface. This compares with about 500 Å in the unbuffered and about 200 Å in the buffered VPE material. A maximum available microwave gain of 10 dB and a noise figure of 3 dB with an associated gain of 5 dB at 8 GHz were measured. Those results are excellent considering the gate length of 1.5µ. Small-signal scattering parameters were measured and the equivalent circuit parameters were calculated. Devices having 0.5µ × 140µ gate dimensions are currently being fabricated. Any results on 0.5µ gate devices,and the performance of 1.5µ gate devices will be discussed. In the light of the above results, it is concluded that the OM-CVD technique may be capable of producing high quality FET material much faster than VPE and at a lower cost.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127764763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0