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1978 International Electron Devices Meeting最新文献

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Design study of gyrotron TWA: Initial consideration on low magnetic field 回旋管TWA设计研究:对低磁场的初步考虑
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189436
Saeyoung Ahn
{"title":"Design study of gyrotron TWA: Initial consideration on low magnetic field","authors":"Saeyoung Ahn","doi":"10.1109/IEDM.1978.189436","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189436","url":null,"abstract":"The gyrotron travelling wave amplifier has been recently demonstrated to obtain high peak power. Its efficiency and bandwidth are also favorably predicted. We will consider high cyclotron harmonic modes to achieve lower magnetic field. For this purpose the linear dispersion equation for the non-vanishing rf angular mode is analysed to find the growth rate (gain). Efficiency and other circuit parameters will also be discussed.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123315459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical and experimental comparison of light triggered and electrically triggered thyristor turn-on 光触发与电触发晶闸管导通的理论与实验比较
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189482
V. Temple, B. Jackson
{"title":"Theoretical and experimental comparison of light triggered and electrically triggered thyristor turn-on","authors":"V. Temple, B. Jackson","doi":"10.1109/IEDM.1978.189482","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189482","url":null,"abstract":"As part of an EPRI funded reserach program on a directly light triggered thyristor for HVDC application, an existing 53mm, 2600V, 1000A electrically fired device was suitably modified to be turned on with an incident photopulse of 20nj, the basic problem being the retension of a 2000 volt per microsecond dV/dt capability. The price paid for high sensitivity and high dV/dt capability was found to be a device inherently more susceptible to di/dt failure. In the efforts to cope with this problem a number of computer type models were developed to assist in predicting turn-on in both electrically and light fired devices with one or more amplifying stages. At the same time devices were fabricated which could be either light or electrically fired. Both the model and experiment point to faster turn-on of the light fired device and an increased requirement for careful design.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123374286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The peniotron: A fast wave device for efficient high power mm-wave generation 加速器:一种快速波装置，用于高效的高功率毫米波产生
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189438
G. Dohler, D. Gallagher, R. Moats
{"title":"The peniotron: A fast wave device for efficient high power mm-wave generation","authors":"G. Dohler, D. Gallagher, R. Moats","doi":"10.1109/IEDM.1978.189438","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189438","url":null,"abstract":"The peniotron is a promising fast wave electron tube device capable of efficiently generating moderately high power at mm wavelengths. Unlike the gyrotron, there is no moding problem and the required magnetic field is much lower. Presented here are the results of large signal ballistic calculations of the efficiency and bandwidth. The efficiency of the interaction is shown to be as high as 95% in fundamental mode operation, and quite high in several harmonic modes as well. However, as a resonance device, the peniotron interaction has a very small bandwidth. On the other hand, small signal calculations have shown that the gain and bandwidth follow the same relationships in the peniotron as in the CFA. The possibility of oscillations such as BWO's are also discussed.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129901645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
The BO-MOS RAM cell BO-MOS RAM单元
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189386
J. Sakurai
{"title":"The BO-MOS RAM cell","authors":"J. Sakurai","doi":"10.1109/IEDM.1978.189386","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189386","url":null,"abstract":"A new structure and its fabrication process of MOS dynamic RAM cells are presented for higher density and potentially higher yield. The buried oxide MOS RAM (BO-MOS RAM) cell consists of a planar MOS transfer gate and a buried storage capacitor of N+diffusion. Its operation is identical to that of the conventional one-transistor dynamic RAM cell. The resulting advantages are (a) A cell size of 6F2with the minimum lithographic feature size F is achieved, which is equivalent to one-fifth to one-eighth of the conventional 16 Kbit or 64 Kbit RAM cell. (b) A combination of the smaller cell size and an elimination of the MOS capacitor should result in higher production yield as well as higher packing density in one-transistor dynamic RAM.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125313686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
What's new in helix TWT's 什么是新的螺旋行波管
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189470
A. Scott, M. Cascone
{"title":"What's new in helix TWT's","authors":"A. Scott, M. Cascone","doi":"10.1109/IEDM.1978.189470","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189470","url":null,"abstract":"Helix TWTs have always been known for their octave bandwidth capabilities, but are often thought of as having low peak power, low average power, and low efficiency. New developments in helix circuit design are changing this image. Helix TWTs are now capable of the following performance in PPM focused, conduction cooled formats: Peak powers of up to 50 kilowatts; average powers of 1.5 kW at 6 GHz; bandwidths of more than 2 octaves; overall effficiencies of 50%; frequency coverage to 50 GHz. This paper will describe the helix circuit features that make such performances possible: Oscillation suppression techniques, including pitch steps and resonant loss to permit high peak power operation; brazed helix-support post assemblies to increase average power; dispersion reducing loading shells to extend bandwidth; multistage depressed collectors to give high efficiency; miniaturized helix circuits to permit operation up to 50 GHz. Examples of these new techniques developed by various companies will be presented.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128810990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A normally-off type buried channel MOSFET for VLSI circuits 一种用于VLSI电路的常关型埋道MOSFET
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189343
K. Nishiuchi, H. Oka, T. Nakamura, H. Ishikawa, M. Shinoda
{"title":"A normally-off type buried channel MOSFET for VLSI circuits","authors":"K. Nishiuchi, H. Oka, T. Nakamura, H. Ishikawa, M. Shinoda","doi":"10.1109/IEDM.1978.189343","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189343","url":null,"abstract":"This paper presents the performance of a buried channel MOSFET (BC-MOSFET) that uses the bulk region as the conducting channel in contrast with the surface channel of the conventional device. Normally-off characteristic has been realized with the p-type silicon gate and the ion-implanted n-channel layer. Fabricated short channel BC-MOSFETs with the gate lengths of 1-3 µ have shown a small shift of threshold voltage with changing the gate length or drain bias. These devices also have high carrier mobility of 750 cm2/v.s and high breakdown voltage compared with those of the conventional device. Minimum delay time of 180 ps was obtained with a 13 stage ring oscillator which was constructed with 1 µ BC-MOSFET.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121072684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
A monolithic InSb charge-coupled infrared imaging device 单片InSb电荷耦合红外成像装置
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189464
R. Thom, F. Renda, W. Parrish, T. Koch
{"title":"A monolithic InSb charge-coupled infrared imaging device","authors":"R. Thom, F. Renda, W. Parrish, T. Koch","doi":"10.1109/IEDM.1978.189464","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189464","url":null,"abstract":"Monolithic charge-coupled infrared imaging devices (CCIRIDs) have been fabricated in InSb and infrared detection and readout with the arrays demonstrated. The CCIRIDs which have been operated are 20-element linear arrays incorporating lateral transfer from MOS detectors into an InSb CCD shift register. The 20-bit register is a four-phase, surface channel, overlapping gate CCD. The charge transfer efficiency (CTE) has been measured by electrical injection of signal using the fat zero (FZ) inputs. At fc= 100 kHz and 77°K, CTE is ≥0.995 operating with a FZ. The CTE is limited by parallel-edge surface state loss and correlates with the surface state density which is in the 5×1011- to 1012-cm-2-eV-1range for the devices tested. Charge integration in the photo-gates, transfer into the register, and serial read-out of the 20 detector signals have been demonstrated for the InSb CCIRIDs.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"93 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116254042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A gyrotron output transmission circuit 一种回旋管输出传输电路
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189437
T. White, R. Dandl, N. Taylor, S. Evans
{"title":"A gyrotron output transmission circuit","authors":"T. White, R. Dandl, N. Taylor, S. Evans","doi":"10.1109/IEDM.1978.189437","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189437","url":null,"abstract":"The chief virtue of gyrotrons, their capability of producing high average power efficiently at millimeter wavelengths, places special demands on separating high power microwaves in oversized waveguides from high power electron beams. It is possible to transmit the microwave power across a region bounded by a large diameter cylindrical collector through the use of two spherical mirrors. The optimization at low power levels of such an arrangement at 28 GHz is discussed along with the presentation of measurements of transmission and mode purity at the output. In a specific case, for the TE01omode using 12-in.-diam spherical mirrors with a 2.5-in.-diam output waveguide, the optimum entrance diameter is 2.5 in. for a 16-in. focal separation. This yields a maximum TE01omode transmission of 94%. Adding a 12- in.-diam cylinder between the mirrors to simulate the collector surface produces a transmission ripple of only ±0.2 dB provided that a O.5-in. gas is present at one mirror to load spurious modes.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125762920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOSFET designs and characteristics for high performance logic at micron dimensions 用于微米级高性能逻辑的MOSFET设计和特性
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189462
R. Dennard, F.H. Gaenssler, E. J. Walker, P. Cook
{"title":"MOSFET designs and characteristics for high performance logic at micron dimensions","authors":"R. Dennard, F.H. Gaenssler, E. J. Walker, P. Cook","doi":"10.1109/IEDM.1978.189462","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189462","url":null,"abstract":"Micron dimension n-channel silicon gate MOSFET's optimized for high performance logic applications have been designed and characterized for both room temperature and liquid nitrogen temperature operation. Variation of threshold voltage with channel length and width are given for both enhancement and depletion devices. Layout groundrules for direct electron-beam pattern exposure using 1 µm minimum linewidth have been proved out in the fabrication of exploratory microprocessor circuitry. Tests on typical NOR logic circuits are described, including unloaded ring oscillators with delays down to 240 ps at room temperature and down to 100 ps at liquid nitrogen temperature.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125855263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
The new DoD initiative in integrated circuits 国防部在集成电路领域的新举措
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189511
L. Weisberg
{"title":"The new DoD initiative in integrated circuits","authors":"L. Weisberg","doi":"10.1109/IEDM.1978.189511","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189511","url":null,"abstract":"The Department of Defense (DoD) h a s i n i t i a t e d a major new program i n i n t e g r a t e d c i r c u i t s ( I C s ) , c a l l e d Very High Speed I n t e g r a t e d C i r c u i t s (VHSI). The purpose of th i s paper is t o d e s c r i b e t h e r a t i o n a l e f o r i t s i n i t i a t i o n , t h e main fea tures of t he p rogram, de l inea te the ma jo r t echn ica l goa l s , and d iscuss i t s p o s s i b l e e f f e c t on t h e I C indust r y .","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128209938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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