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1978 International Electron Devices Meeting最新文献

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GaAs integrated circuits: MSI status and VLSI prospects GaAs集成电路:MSI现状与VLSI展望
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189339
R. Eden
{"title":"GaAs integrated circuits: MSI status and VLSI prospects","authors":"R. Eden","doi":"10.1109/IEDM.1978.189339","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189339","url":null,"abstract":"The very high electron mobility of GaAs, aided by the use of semi-insulating GaAs substrate material, makes possible the achievement of very high switching speed (τd< 100ps) integrated circuits which can simultaneously exhibit very low dynamic switching energies (PDτd< 100fJ). Planar GaAs circuits of this performance have already been demonstrated. Such circuits, with < 1000µm2gate areas, open the way to an extremely high performance, very dense, low power VLSI technology. It is the purpose of this paper to summarize the reasons why GaAs is so attractive for high performance ICs, to review the present status of GaAs IC development efforts and their results for MSI and upper MSI (near LSI) circuits, and to explore the prospects for the extension of this technology into the VLSI regime.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115338989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
The effects of surface potential on surface recombination and the performance of silicon solar cells 表面电位对硅太阳电池表面复合及性能的影响
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189355
R. J. Schwartz, J. Bouknight, M. S. Worley
{"title":"The effects of surface potential on surface recombination and the performance of silicon solar cells","authors":"R. J. Schwartz, J. Bouknight, M. S. Worley","doi":"10.1109/IEDM.1978.189355","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189355","url":null,"abstract":"This paper describes the effect on the short circuit current of varying the surface potential of the illuminated surface of an Interdigitated Back Contact solar cell. The surface potential of the IBC cell is controlled by means of a transparent conducting field plate. The application of a suitable potential to the conducting layer can modulate the surface potential from strong accumulation through depletion to strong inversion. The results of this experiment are explained in terms of the effects of the varying surface potential on surface recombination and the depletion layer recombination, which occurs in the case of an inverted surface. The results of computer calculations are also presented. A comparison of the relative merits of the Front Surface Field cell, the Interdigitated Back Contact cell, and the Tandem cell is made based on the experimental and theoretical results presented.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115357537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Interface state measurements and computer simulation studies of MIS solar cells MIS太阳能电池界面状态测量与计算机模拟研究
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189359
J.K. Kim, W. Anderson, S. Hyland
{"title":"Interface state measurements and computer simulation studies of MIS solar cells","authors":"J.K. Kim, W. Anderson, S. Hyland","doi":"10.1109/IEDM.1978.189359","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189359","url":null,"abstract":"Experimental surface state studies on MIS diodes show average surface state density values of 2.5 × 10<sup>11</sup>, 5.5 × 10<sup>11</sup>, 3 × 10<sup>12</sup>, and 4 × 10<sup>12</sup>ev<sup>-1</sup>cm<sup>-2</sup>for","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131283340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Polymer semiconductor solar cells 聚合物半导体太阳能电池
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189398
M.J. Cohen, J. Harris
{"title":"Polymer semiconductor solar cells","authors":"M.J. Cohen, J. Harris","doi":"10.1109/IEDM.1978.189398","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189398","url":null,"abstract":"We report the first solar cell whose junction is formed by a polymer-semiconductor interface. Open circuit voltages, V<inf>oc</inf>> 0.7 V have been observed on cells consisting of a thin film of polymeric sulfur-nitride, (SN)<inf>x</inf>, deposited on GaAs. This is an enhancement of more than 40% over the V<inf>oc</inf>commonly measured with metal-GaAs solar cells. Initial efforts have resulted in efficiencies >6% without antireflection coatings. Similar enhancements in V<inf>oc</inf>are observed in (SN)<inf>x</inf>-silicon solar cells. The doped polymer (SNBr<inf>0.4</inf>)<inf>x</inf>has a higher conductivity and greater transmission of the solar spectrum than (SN)<inf>x</inf>. The implications of (SNBr<inf>0.4</inf>)<inf>x</inf>to both single crystal and polycrystalline GaAs solar cells will be discussed.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123437414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of a 32×32 InSb hybrid IR focal plane 32&#215; 32insb混合红外焦平面的表征
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189467
W. Parrish, F. Renda, N.L. Ray, D. Maeding, R. E. Eck, J. Toman
{"title":"Characterization of a 32&#215;32 InSb hybrid IR focal plane","authors":"W. Parrish, F. Renda, N.L. Ray, D. Maeding, R. E. Eck, J. Toman","doi":"10.1109/IEDM.1978.189467","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189467","url":null,"abstract":"","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115650299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A comparative reliability study: Aluminum gate vs. gold-base gate GaAs MESFETs 可靠性比较研究:铝栅与金基栅GaAs mesfet
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189434
M. Benedek, B. Hewitt
{"title":"A comparative reliability study: Aluminum gate vs. gold-base gate GaAs MESFETs","authors":"M. Benedek, B. Hewitt","doi":"10.1109/IEDM.1978.189434","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189434","url":null,"abstract":"Temperature accelerated tests, with and without bias, show that the considerable MTTF advantage, at elevated temperature, of Al gate MESFETs over gold-base gate devices diminishes at lower temperatures. This is due to the difference in the activation energies, EA, of the respective gate metallization systems (EA= 0.8-1.2 ev for Al-gate and EA= 1.3-1.8 ev for gold-base gate devices). The standard deviation of the logarithms of the lifetimes, σ, was less than 0.3 in all cases. The primary mode of failure for all types of devices was a gradual degradation of IDSS. Impurity profiles indicated that the associated failure mechanism is a gate metal interaction with the epi-layer. It has been established that the degradation of the low-field resistance, RDS, is not an index of contact resistance degradation, but the logical consequence of the above failure mechanism.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123835827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Plasma reactor — A complete IC factory ? 等离子体反应器&#8212;完整的IC工厂?
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189449
A. Reinberg
{"title":"Plasma reactor &#8212; A complete IC factory ?","authors":"A. Reinberg","doi":"10.1109/IEDM.1978.189449","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189449","url":null,"abstract":"Parallel plate (planar) plasma reactors have been demonstrated to be capable of performing all of the material removal processes necessary for fabricating integrated circuits. Coupled with the recognized high quality of plasma deposited dielectric films for masking, insulation, and passivation applications, the \"one machine\" IC factory becomes an intriguing possibility. In this paper we will trace a typical IC process flow from mask making to final packaging. Real world results and problems will be stressed in connection with cleaning, oxidation, composition, uniformity and step coverage in film deposition, edge definition, selectivity, undercutting and side effects in etching. Process control requirements and the necessity of coupling new process specifications into product design at the earliest stages will be discussed. Speculation on future developments will also be presented.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124292359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A low noise CCD output amplifier 一种低噪声CCD输出放大器
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189491
R. Brewer
{"title":"A low noise CCD output amplifier","authors":"R. Brewer","doi":"10.1109/IEDM.1978.189491","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189491","url":null,"abstract":"A new low noise CCD output amplifier, the \"floating surface detector\", has been designed and evaluated. At -50°C it yields a noise equivalent signal of 16 electrons and a dynamic range of 85dB over a 1MHz video bandwidth.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117152955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A linear efficient EBS amplifier 一种线性高效的EBS放大器
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189440
S. Blazo, B. Bell
{"title":"A linear efficient EBS amplifier","authors":"S. Blazo, B. Bell","doi":"10.1109/IEDM.1978.189440","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189440","url":null,"abstract":"Linear highly efficient RF amplifiers are of considerable interest in many applications where multisignal interference must be minimized, and the power and cooling budget limited. This paper describes the design and evaluation of a grid modulated EBS amplifier with superior linearity and efficiency. Modifications to the grid structure are described which result in an extremely linear transfer characteristic under efficient operating conditions. The resulting amplifier exhibits third order intermodulation distortion of -36DBC at an efficiency of 45% and -25DBC at an efficiency of 60%. Single signal results at 50MHz are 300 watts CW at an overall device efficiency of 72% and a device gain of 26DB.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114964040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A device model for the tandem junction solar cell 串联结太阳能电池的器件模型
1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1978.189513
W. T. Matzen, S. Chiang, B. G. Carbajal
{"title":"A device model for the tandem junction solar cell","authors":"W. T. Matzen, S. Chiang, B. G. Carbajal","doi":"10.1109/IEDM.1978.189513","DOIUrl":"https://doi.org/10.1109/IEDM.1978.189513","url":null,"abstract":"A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115438996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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