{"title":"聚合物半导体太阳能电池","authors":"M.J. Cohen, J. Harris","doi":"10.1109/IEDM.1978.189398","DOIUrl":null,"url":null,"abstract":"We report the first solar cell whose junction is formed by a polymer-semiconductor interface. Open circuit voltages, V<inf>oc</inf>> 0.7 V have been observed on cells consisting of a thin film of polymeric sulfur-nitride, (SN)<inf>x</inf>, deposited on GaAs. This is an enhancement of more than 40% over the V<inf>oc</inf>commonly measured with metal-GaAs solar cells. Initial efforts have resulted in efficiencies >6% without antireflection coatings. Similar enhancements in V<inf>oc</inf>are observed in (SN)<inf>x</inf>-silicon solar cells. The doped polymer (SNBr<inf>0.4</inf>)<inf>x</inf>has a higher conductivity and greater transmission of the solar spectrum than (SN)<inf>x</inf>. The implications of (SNBr<inf>0.4</inf>)<inf>x</inf>to both single crystal and polycrystalline GaAs solar cells will be discussed.","PeriodicalId":164556,"journal":{"name":"1978 International Electron Devices Meeting","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polymer semiconductor solar cells\",\"authors\":\"M.J. Cohen, J. Harris\",\"doi\":\"10.1109/IEDM.1978.189398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the first solar cell whose junction is formed by a polymer-semiconductor interface. Open circuit voltages, V<inf>oc</inf>> 0.7 V have been observed on cells consisting of a thin film of polymeric sulfur-nitride, (SN)<inf>x</inf>, deposited on GaAs. This is an enhancement of more than 40% over the V<inf>oc</inf>commonly measured with metal-GaAs solar cells. Initial efforts have resulted in efficiencies >6% without antireflection coatings. Similar enhancements in V<inf>oc</inf>are observed in (SN)<inf>x</inf>-silicon solar cells. The doped polymer (SNBr<inf>0.4</inf>)<inf>x</inf>has a higher conductivity and greater transmission of the solar spectrum than (SN)<inf>x</inf>. The implications of (SNBr<inf>0.4</inf>)<inf>x</inf>to both single crystal and polycrystalline GaAs solar cells will be discussed.\",\"PeriodicalId\":164556,\"journal\":{\"name\":\"1978 International Electron Devices Meeting\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1978.189398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1978.189398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report the first solar cell whose junction is formed by a polymer-semiconductor interface. Open circuit voltages, Voc> 0.7 V have been observed on cells consisting of a thin film of polymeric sulfur-nitride, (SN)x, deposited on GaAs. This is an enhancement of more than 40% over the Voccommonly measured with metal-GaAs solar cells. Initial efforts have resulted in efficiencies >6% without antireflection coatings. Similar enhancements in Vocare observed in (SN)x-silicon solar cells. The doped polymer (SNBr0.4)xhas a higher conductivity and greater transmission of the solar spectrum than (SN)x. The implications of (SNBr0.4)xto both single crystal and polycrystalline GaAs solar cells will be discussed.
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