Plasma reactor — A complete IC factory ?

A. Reinberg
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引用次数: 2

Abstract

Parallel plate (planar) plasma reactors have been demonstrated to be capable of performing all of the material removal processes necessary for fabricating integrated circuits. Coupled with the recognized high quality of plasma deposited dielectric films for masking, insulation, and passivation applications, the "one machine" IC factory becomes an intriguing possibility. In this paper we will trace a typical IC process flow from mask making to final packaging. Real world results and problems will be stressed in connection with cleaning, oxidation, composition, uniformity and step coverage in film deposition, edge definition, selectivity, undercutting and side effects in etching. Process control requirements and the necessity of coupling new process specifications into product design at the earliest stages will be discussed. Speculation on future developments will also be presented.
等离子体反应器—完整的IC工厂?
平行板(平面)等离子体反应器已被证明能够执行制造集成电路所需的所有材料去除过程。再加上公认的高质量的等离子沉积介质薄膜,用于屏蔽,绝缘和钝化应用,“一体机”集成电路工厂成为一个有趣的可能性。在本文中,我们将跟踪从掩模制作到最终封装的典型IC工艺流程。真实世界的结果和问题将强调与清洁、氧化、成分、均匀性和膜沉积中的步骤覆盖、边缘清晰度、选择性、侵蚀和蚀刻中的副作用有关。过程控制要求和在早期阶段将新工艺规范耦合到产品设计中的必要性将被讨论。对未来发展的猜测也将被提出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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